前兩天終于收到了評審意見，文章是關(guān)于MoS2吸附的。評審人問了GGA計(jì)算能帶時帶隙修正的問題，因?yàn)樽x過的相關(guān)論文里關(guān)于帶隙的部分也都是沒有修正的，但是也沒說明為什么，文章里就沒有用+U、剪刀之類的修正，帶隙計(jì)算結(jié)果1.72eV。想請教一下，該怎么回復(fù)才好。
審稿人意見如下：As it is well-known, the bandgap of semiconductor presented by GGA method is underestimated, in Fig. 2, the author gives band diagram of the clean and adsorption configurations of MoS2, is there any corrections performed with respect to band gap? such as Scissors operator, DFT-D, etc. If not, please add some explanations. 返回小木蟲查看更多