請問有人看過相關(guān)文獻嗎，按關(guān)鍵詞檢索不出來。下面是描述：
The field effect mobility in saturation regime is a kind of contact free mobility, due to high drain voltage, the barrier between semiconductor and S/D metal can be decreased. The contact condition is more critical factor to determine the field effect mobility in linear regime. If there is any reference paper to show the contact condition can effect on field effect mobility in saturation regime of TFT, please add the references.

 返回小木蟲查看更多