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| 張韻, 謝自力, 柴旭朝,等.厚度對GaN薄膜的發(fā)光性能的影響，光學(xué)學(xué)報(bào)，2012, 32(12): 338-341 |
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sunshan4379
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下次求助請?zhí)峁┯⑽臉?biāo)題 Accession number: 20131016087865 Title: Luminescence property of GaN films with change of thickness Authors: Zhang, Yun1 Email author jszhangyun@hotmail.com; Xie, Zili1 Email author xzl@nju.edu.cn; Chai, Xuzhao1; Wang, Jian1; Liu, Bin1; Chen, Peng1; Zhang, Rong1; Han, Ping1; Shi, Yi1; Zheng, Youliao1 Author affiliation: 1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, China Corresponding author: Xie, Z. (xzl@nju.edu.cn) Source title: Guangxue Xuebao/Acta Optica Sinica Abbreviated source title: Guangxue Xuebao Volume: 32 Issue: SUPPL.1 Issue date: December 2012 Publication year: 2012 Article number: s131004 Language: Chinese ISSN: 02532239 CODEN: GUXUDC Document type: Journal article (JA) Publisher: Chinese Optical Society, P.O. Box 80, Xi'an, 710068, China Abstract: Luminescence properties of GaN films with different thicknesses grown on γ-Al2O3 by MOCVD are studied from the absorption spectra and photoluminescence (PL) spectra. All the absorption spectra of films with different thicknesses have a cut-off edge around 3.38 eV, which is also observed in PL spectra. The thickness is estimated by using the interference fringes in the spectra, and the similar results suggest the same generation mechanism. Yellow luminescence (YL) is not observed in front-side PL excitation, whereas blue luminescence (BL) is obvious, appearing a blue shift in peak position and an increase of light intensity with the increase of the thickness. It is believed that a large number of oxygen impurity are brought in during the epitaxy growth, and the positive ON donor and the negative VGa acceptor can easily form the VGa-ON complex. The energy level of the VGa-ON complex is gradually pulled down with the increasing thickness. The PL spectrum obtained from backside excitation confirms this point. Number of references: 12 Main heading: Light absorption Controlled terms: Absorption spectra - Absorption spectroscopy - Gallium nitride - Light emission - Luminescence of inorganic solids - Photoluminescence - Thin films Uncontrolled terms: Blue luminescence - Blue shift - GaN - GaN film - Generation mechanism - Interference fringe - Light intensity - Luminescence properties - Negative V - Oxygen impurity - Peak position - Photoluminescence spectrum - PL excitations - PL spectra - Thickness - Yellow luminescence Classification code: 714.2 Semiconductor Devices and Integrated Circuits - 741 Light, Optics and Optical Devices - 741.1 Light/Optics - 801 Chemistry - 804.2 Inorganic Compounds DOI: 10.3788/AOS201232.s131004 Database: Compendex Compilation and indexing terms, © 2016 Elsevier Inc. |
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