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shenxianshifu至尊木蟲(chóng) (知名作家)
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[求助]
書(shū)籍求助：Gallium Oxide: Materials Properties, Crystal Growth, and Devices 已有1人參與
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各位大神，誰(shuí)有這本書(shū)的電子版，謝謝 Gallium Oxide: Materials Properties, Crystal Growth, and Devices 主編：Masataka Higashiwaki（日本國(guó)立信息學(xué)研究所，氧化鎵器件權(quán)威） 出版：Springer（2020），764 頁(yè) |
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【答案】應(yīng)助回帖
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Over the past 60 years, the history of semiconductor research and development has been driven by the exploration of new materials with different bandgap energy, starting from Ge and Si through III-V (GaAs, InGaAs, InP, and so on) to wide bandgap materials such as SiC and GaN. This was simply because the bandgap determines most of the fundamental optical and electrical properties of a semiconductor and thus leads to specific applications that capitalize on the strengths of each material. In the last decade, gallium oxide (Ga2O3) has become well recognized as a new wide bandgap semiconductor, whose material properties and device process technologies are being intensively investigated and developed these days. The renaissance in Ga2O3 research also stimulated a new semiconductor field called “ultrawide-bandgap semiconductors,” which correspond to materials categorized by bandgap energy larger than the 3.4 eV value of SiC and GaN. Ga2O3 technologies are rapidly evolving owing to active research and development worldwide. Our editing of this book was motivated by the desire to draw more attention to Ga2O3 from researchers, scientists, and eager students in the semiconductor field. This book provides extensive information about Ga2O3, covering physical properties recently elucidated to state-of-the-art growth and device process technologies. Valuable knowledge was presented by about ninety leading researchers in this field. Following an introduction in Chap. 1, this book is organized into four parts. Part I Chapters 2–4 introduce Ga2O3 melt bulk growth technologies: Czochralski, Bridgman, floating-zone, and edge-defined film-fed growth (EFG) methods. Wafer manufacturing from EFG Ga2O3 bulk crystals is also discussed in Chap. 4. Part II Chapters 5–16 treat various epitaxial growth technologies, such as molecular beam epitaxy, metalorganic chemical vapor deposition, halide vapor phase epitaxy, mist chemical vapor deposition, pulsed laser deposition, and low-pressure chemical vapor deposition. Part III Chapters 17–30 focus on material properties. Chapters 17 and 18 deal with the physical properties of Ga2O3 and its alloys from first principles calculations. Structural, electrical, optical, phonon, thermal, and scintillation properties of Ga2O3 and related materials are then discussed in Chaps. 19–30. Part IV Electrical and optical Ga2O3 devices are introduced in Chaps. 31–39, covering Ga2O3 field-effect transistors, diodes, ultraviolet detectors, and image sensors. At the end, a personal recollection by Prof. Debdeep Jena (Cornell University, USA) of his Ga2O3 research is also included in Chap. 40 as a special contribution. He described why he was motivated to work in the new semiconductor research field of Ga2O3. This is especially useful for young and new audiences to the Ga2O3 field, who are the main targets of this book. Ga2O3 is a unique material with many attractive properties. We hope that this book will familiarize the readers with the properties and possibilities of Ga2O3 and that the readers will be inspired to get involved in this emerging semiconductor field. Last but not least, we would like to express our sincere thanks to all the contributors of the chapters in this book for their tremendous efforts in preparing the manuscripts. Tokyo, Japan Masataka Higashiwaki Kyoto, Japan Shizuo Fujita |
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