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求助:翻譯PRB中理論的一部分
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We have found that AgBixSb1−xTe2 alloys exhibit D4 ordering of Ag vs (Bi,Sb) cations and are fully miscible down to the room temperature. Generally, Ag1−x−yBixSbyTe2 alloys are miscible if constrained to the rocksalt lattice. Without such a constraint, nonrocksalt phases become thermodynamically stable at all compositions at sufficiently low temperatures. The band structures of AgSbTe2 and AgBiTe2 share many similarities; in particular, in both compounds the dispersion around the VBM is reasonably approximated by Eq. (1). However, stronger spin-orbit coupling in Bi-containing materials changes some band-structure features by up to ~1 eV, in particular, leading to a different absorption edge for direct optical transitions and a second gap at * +1.3 eV seen in AgBiTe2 dispersion. The topology of the Fermi surface is sensitive to the hole doping. A detailed analysis of the experimental de Haas-van Alphen data based on the calculated band structure suggests the Fermi level in naturally doped samples is located around ** meV, not far from the value estimated in Ref. 20. |

榮譽版主 (文壇精英)
拼搏到無能為力,努力到感動自
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我們發(fā)現(xiàn),AgBixSb1 - xTe2合金顯示了 銀與其相對的鉍,銻陽離子是處于一種四維的空間排序,并且這些合金粒子在室溫的條件下就很容易互混在一起的。 一般來說,Ag1−x−yBixSbyTe2 合金的易于互混性是因為它們的巖鹽礦格結(jié)構(gòu)! 如果沒有這個礦格的制約 ,比如非巖鹽相,它們在足夠低的溫度下的所有成分是具有熱穩(wěn)定性的。此外,AgSbTe2和AgBiTe2的能帶結(jié)構(gòu)也存在很多的相似之處;特別是,對于這兩種物質(zhì)的各成分的分散情況(VBM-垂直布里奇曼法)可以通過合理的模擬,如式子1所示。然而,強自旋軌道耦合的雙載材料改變一些帶結(jié)構(gòu)特征達 〜1伏特,特別是導(dǎo)致了不同的吸收邊發(fā)生了直接光變,而且也發(fā)現(xiàn)在第二能帶(在*+1.3伏特)有AgBiTe2分散的情況。該費米表面的拓撲結(jié)構(gòu)對孔洞的摻雜很敏感。我們同時也通過能帶結(jié)構(gòu)的計算來詳細地闡述了如何通過實驗來分析哈斯凡阿爾芬基礎(chǔ)的數(shù)據(jù)。結(jié)果表明在費米能級自然摻雜位于**毫電子伏特左右,我們所得的數(shù)據(jù)與參考文獻20的結(jié)果很相似! [ Last edited by lxuyan on 2010-4-20 at 18:38 ] |


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