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【分享】paper-show-Boron-tuned bonding mechanism
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1,作者:Chun-Sheng Liu and Zhi Zeng(第一作者) 2,所在學(xué);騿挝唬闼趩挝唬篕ey Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China 3,文章題目 :Boron-tuned bonding mechanism of Li-graphene complex for reversible hydrogen storage 4,期刊名 :Applied Physics Letters 5,年份,卷(期),起止頁碼 :Volume 96, 2010, Pages 123101 6,影響因子 :3.554 7,文章鏈接 :http://link.aip.org/link/?APPLAB/96/123101/1 8,摘要: Based on first-principles density functional theory, we show that boron-doping significantly enhances the Li bond strength on the graphene. The transition from s– p hybridization of the Li-graphene complex to p– p hybridization of the Li-coated boron-doped graphene is responsible for the enhanced binding energy. The charge redistribution induced by boron-doping gives rise to two parts of an electrostatic potential energy one is around the Li atom and the other is parallel to the graphene plane. Four polarized H2 molecules are attached to one Li atom with an optimal binding energy of 0.13 eV/H2. 9,文章納米盤鏈接:必須發(fā)到納米盤,方便進(jìn)不了數(shù)據(jù)庫的朋友查閱。http://d.namipan.com/d/973ad6176 ... 1d2f42a364b79c00600 |
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