 |
 |
 |
| 24小時(shí)熱門(mén)版塊排行榜 |
- >論壇更新日志 (5009)
- >導(dǎo)師招生 (879)
- >考研 (668)
- >文獻(xiàn)求助 (330)
- >蟲(chóng)友互識(shí) (227)
- >考博 (162)
- >休閑灌水 (155)
- >基金申請(qǐng) (144)
- >碩博家園 (103)
- >招聘信息布告欄 (92)
- >博后之家 (75)
- >綠色求助(高懸賞) (46)
- >論文投稿 (32)
- >找工作 (28)
- >SciFinder/Reaxys (23)
- >外文書(shū)籍求助 (15)
 |
 |
 |
||
 |
 |
 |
 |
 |
| 5 | 1/1 | 返回列表 |
| 查看: 963 | 回復(fù): 4 | ||||
| 本帖產(chǎn)生 1 個(gè) 博學(xué)EPI ，點(diǎn)擊這里進(jìn)行查看 | ||||
xdkevin金蟲(chóng) (職業(yè)作家)
|
[交流]
求SCI檢索記錄
|
|||
|
https://apl.aip.org/resource/1/applab/v95/i16/p161904_s1 Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang，Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire, Applied Physics Letters, October 2009, 95:161904 求上文的SCI檢索記錄 在線等，謝謝！ |
回復(fù)此樓» 猜你喜歡
0854 考研調(diào)劑 招生了！AI 方向
已經(jīng)有14人回復(fù)
-
328求調(diào)劑
已經(jīng)有3人回復(fù)
-
一志愿重慶大學(xué)085700資源與環(huán)境，總分308求調(diào)劑
已經(jīng)有5人回復(fù)
-
招08考數(shù)學(xué)
已經(jīng)有14人回復(fù)
-
一志愿上海交大生物與醫(yī)藥專碩324分，求調(diào)劑
已經(jīng)有4人回復(fù)
-
0854電子信息求調(diào)劑 324
已經(jīng)有3人回復(fù)
-
303求調(diào)劑
已經(jīng)有3人回復(fù)
-
336求調(diào)劑
已經(jīng)有3人回復(fù)
-
306求調(diào)劑
已經(jīng)有9人回復(fù)
-
工科0856求調(diào)劑
已經(jīng)有4人回復(fù)
» 本主題相關(guān)價(jià)值貼推薦，對(duì)您同樣有幫助:
- RMIT University (澳大利亞皇家墨爾本理工大學(xué)) 信息檢索研究組招收PHD
已經(jīng)有0人回復(fù)
- SCI投稿過(guò)程總結(jié)、投稿狀態(tài)解析、拒稿后對(duì)策及接受后期相關(guān)問(wèn)答
已經(jīng)有142人回復(fù)
- 已發(fā)中文核心3篇，SCI 3篇的研三碩士求博導(dǎo)帶走
已經(jīng)有68人回復(fù)
- 求SCI檢索記錄
已經(jīng)有3人回復(fù)
- 求SCI檢索記錄
已經(jīng)有1人回復(fù)
- 我閱讀科研文獻(xiàn)的一些做法 （感覺(jué)前面發(fā)的不全，看得人不多）
已經(jīng)有54人回復(fù)
» 搶金幣啦！回帖就可以得到:
-
94年女征男友
+1/272
-
澳門(mén)科技大學(xué)創(chuàng)新工程學(xué)院誠(chéng)招博士生
+2/178
-
福建師范大學(xué)葉應(yīng)祥課題組招收2026級(jí)博士研究生
+2/132
-
化學(xué)化工學(xué)院 招收化工、化學(xué)、材料等相關(guān)方向研究生（學(xué)碩、專碩都有調(diào)劑名額）
+1/83
-
春天就該逛吃逛吃
+1/79
-
2026設(shè)施園藝作物環(huán)境調(diào)控與綠色生產(chǎn)團(tuán)隊(duì)招收相關(guān)專業(yè)調(diào)劑研究生
+1/36
-
吲哚美辛原料藥合成交流
+1/35
-
招收熒光探針/有機(jī)合成/生物學(xué) 博士后--薪金: 30萬(wàn)-50萬(wàn)
+1/32
-
湖北工業(yè)大學(xué) 生命科學(xué)與健康學(xué)院 課題組招收2026級(jí)食品/生物方向碩士
+1/28
-
南京林業(yè)大學(xué)-國(guó)家級(jí)青年人才團(tuán)隊(duì) 招2026級(jí)博士、碩士（合成化學(xué)、植物化學(xué)方向）
+1/18
-
湖南大學(xué)微生物結(jié)構(gòu)與功能實(shí)驗(yàn)室2026年計(jì)劃招收博士研究生
+1/17
-
下周見(jiàn)一個(gè)合作者，應(yīng)該問(wèn)些什么
+1/17
-
麗水學(xué)院 材料與能源工程學(xué)院 陳江飛老師課題組碩士招生----材料與化工專業(yè)
+1/16
-
湖南大學(xué)微生物結(jié)構(gòu)與功能實(shí)驗(yàn)室2026年計(jì)劃招收博士研究生
+1/15
-
浙江中醫(yī)藥大學(xué)副校長(zhǎng)團(tuán)隊(duì)招聘藥學(xué)/生物信息學(xué)等方向高校教師7名，報(bào)名通道已開(kāi)啟
+1/12
-
西南某211招27屆博士
+1/12
-
中國(guó)科學(xué)院上海硅酸鹽研究所招聘科研助理
+1/5
-
武漢高校國(guó)家級(jí)人才團(tuán)隊(duì)招收材料，化學(xué)，紡織等專業(yè)碩士調(diào)劑生
+2/4
-
MDPI下IJMS投稿 pending editor decision 9天
+1/3
-
中國(guó)民航飛行學(xué)院先進(jìn)連接團(tuán)隊(duì)招收航空宇航、航空機(jī)械專業(yè)碩士研究生（學(xué)碩專碩均可）
+1/3
ylhttzj
至尊木蟲(chóng) (知名作家)
- 博學(xué)EPI: 15
- 應(yīng)助: 31 (小學(xué)生)
- 金幣: 24367.7
- 帖子: 5390
- 在線: 504.5小時(shí)
- 蟲(chóng)號(hào): 440487
xdkevin(金幣+1, 博學(xué)EPI+1): 謝謝！ 2011-03-05 15:47:31
|
標(biāo)題: Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire 作者: Wang, Q; Gong, YP; Zhang, JF, et al. 來(lái)源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文獻(xiàn)編號(hào): 161904 出版年: 2009 被引頻次: 1 下文就是引用APPLIED PHYSICS LETTERS的論文。 標(biāo)題: The investigation of the visible photoluminescence in AlN films deposited by sputtering 作者: Chen D, Li W, Yan X, et al.來(lái)源出版物: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 卷: 4 期: 7 頁(yè): 960-964 出版年: JUL 2010 來(lái)源ISI Web of Knowledge |
2樓2011-03-04 12:58:37
zhaohaixing
榮譽(yù)版主 (著名寫(xiě)手)
-
專家經(jīng)驗(yàn): +6 - 博學(xué)EPI: 142
- 應(yīng)助: 14 (小學(xué)生)
- 貴賓: 1.609
- 金幣: 21944.6
- 帖子: 1952
- 在線: 3129.5小時(shí)
- 蟲(chóng)號(hào): 979078
xdkevin(金幣+1): 謝謝 2011-03-05 15:47:39
|
Web of Science® – 現(xiàn)在可以同時(shí)檢索會(huì)議錄文獻(xiàn) 注意 << 返回結(jié)果列表 第 1 條記錄 (共 1 條記錄) Web of Science® 中的記錄 Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire Library of CAS Tsinghua University Peking University Fudan univ NCL OPAC Shanghai Jiotong Univ 更多選項(xiàng) 作者: Wang Q (Wang, Q.)1, Gong YP (Gong, Y. P.)1, Zhang JF (Zhang, J. F.)1, Bai J (Bai, J.)1, Ranalli F (Ranalli, F.)1, Wang T (Wang, T.)1 來(lái)源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文獻(xiàn)編號(hào): 161904 出版年: OCT 19 2009 被引頻次: 1 參考文獻(xiàn): 17 引證關(guān)系圖 摘要: It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] 文獻(xiàn)類型: Article 語(yǔ)言: English KeyWords Plus: ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER 通訊作者地址: Wang, T (通訊作者), Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire England 地址: 1. Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire England 電子郵件地址: t.wang@sheffield.ac.uk 基金資助致謝: 基金資助機(jī)構(gòu) 授權(quán)號(hào) UK Engineering and Physical Sciences Research Council (EPSRC) EP/F03363X/1 EP/C543513/1 [顯示基金資助信息] This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. 出版商: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA 學(xué)科類別: Physics, Applied IDS 號(hào): 512BU ISSN: 0003-6951 DOI: 10.1063/1.3253416 |
3樓2011-03-04 13:10:28
xdkevin
金蟲(chóng) (職業(yè)作家)
- 應(yīng)助: 0 (幼兒園)
- 金幣: 11534.1
- 帖子: 4638
- 在線: 128.6小時(shí)
- 蟲(chóng)號(hào): 281431
4樓2011-03-04 13:30:49
parklyn
鐵桿木蟲(chóng) (職業(yè)作家)
- 博學(xué)EPI: 10
- 應(yīng)助: 20 (小學(xué)生)
- 金幣: 6575.9
- 帖子: 4173
- 在線: 292.5小時(shí)
- 蟲(chóng)號(hào): 784735
xdkevin(金幣+23): 太感謝了！ 2011-03-05 15:47:52
|
FN ISI Export Format VR 1.0 PT J AU Wang, Q Gong, YP Zhang, JF Bai, J Ranalli, F Wang, T AF Wang, Q. Gong, Y. P. Zhang, J. F. Bai, J. Ranalli, F. Wang, T. TI Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire SO APPLIED PHYSICS LETTERS LA English DT Article ID ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER AB It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] C1 [Wang, Q.; Gong, Y. P.; Zhang, J. F.; Bai, J.; Ranalli, F.; Wang, T.] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England. RP Wang, T, Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England. EM t.wang@sheffield.ac.uk FU UK Engineering and Physical Sciences Research Council (EPSRC) [EP/F03363X/1, EP/C543513/1] FX This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. CR AMANO H, 1990, JPN J APPL PHYS PT 2, V29, L205 BAI J, 2006, APPL PHYS LETT, V89, ARTN 131925 BAI J, 2006, J APPL PHYS, V99, ARTN 023513 BAI J, 2006, J CRYST GROWTH, V289, P63, DOI 10.1016/j.jcrysgro.2005.10.146 CHEN Z, 2006, APPL PHYS LETT, V89, ARTN 081905 EDGAR JH, 1994, PROPERTIES GROUP 3 N, P74 KATONA TM, 2004, APPL PHYS LETT, V84, P5025, DOI 10.1063/1.1763634 OGILVY H, 2005, OPT EXPRESS, V13, P9465 PERTON SJ, 1997, GAN RELATED MAT, V2, P291 SHATALOV M, 2006, JPN J APPL PHYS 2, V45, L1286, DOI 10.1143/JJAP.45.L1286 SIVAPRAKASAM V, 2004, OPT EXPRESS, V12, P4457 TAKANO T, 2004, APPL PHYS LETT, V84, P3567, DOI 10.1063/1.1737061 TAKANO T, 2004, JPN J APPL PHYS 2, V43, L1258, DOI 10.1143/JJAP.43.L1258 WANG T, 2005, APPL PHYS LETT, V87, ARTN 151906 WANG T, 2006, APPL PHYS LETT, V89, ARTN 081126 YOSHIDA H, 2008, APPL PHYS LETT, V93, ARTN 241106 YOSHIDA H, 2008, NAT PHOTONICS, V2, P551, DOI 10.1038/nphoton.2008.135 NR 17 TC 1 PU AMER INST PHYSICS PI MELVILLE PA CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA SN 0003-6951 J9 APPL PHYS LETT JI Appl. Phys. Lett. PD OCT 19 PY 2009 VL 95 IS 16 AR 161904 DI 10.1063/1.3253416 PG 3 SC Physics, Applied GA 512BU UT ISI:000271218200017 |
5樓2011-03-05 14:24:26
相關(guān)版塊跳轉(zhuǎn)
我要訂閱樓主 xdkevin 的主題更新
| 5 | 1/1 | 返回列表 |
| 最具人氣熱帖推薦 [查看全部] | 作者 | 回/看 | 最后發(fā)表 | |
|---|---|---|---|---|
|
[考研] 接收2026碩士調(diào)劑(學(xué)碩+專碩) +3 | allen-yin 2026-03-23 | 4/200 |
|
|---|---|---|---|---|
|
[考研]
求調(diào)劑材料學(xué)碩080500，總分289分
5+3
|
@taotao 2026-03-19 | 21/1050 |
|
|
|
[考研] 一志愿北京化工大學(xué) 070300 學(xué)碩 336分 求調(diào)劑 +5 | vv迷 2026-03-22 | 5/250 |
|
|
|
[考研] 308求調(diào)劑 +3 | 墨墨漠 2026-03-21 | 3/150 |
|
|
|
[考研] 生物學(xué)071000 329分求調(diào)劑 +5 | 我愛(ài)生物生物愛(ài)?/a> 2026-03-17 | 5/250 |
|
|
|
[考研] 一志愿 西北大學(xué) ，070300化學(xué)學(xué)碩，總分287，雙非一本，求調(diào)劑。 +3 | 晨昏線與星海 2026-03-20 | 3/150 |
|
|
|
[考研] 311求調(diào)劑 +3 | 26研0 2026-03-20 | 3/150 |
|
|
|
[考研] 085600材料與化工306 +4 | z1z2z3879 2026-03-21 | 4/200 |
|
|
|
[考研] 資源與環(huán)境 調(diào)劑申請(qǐng)(333分) +5 | holy J 2026-03-21 | 5/250 |
|
|
|
[考研] 材料學(xué)碩333求調(diào)劑 +3 | 北道巷 2026-03-18 | 3/150 |
|
|
|
[考研] 302求調(diào)劑 +12 | 呼呼呼。。。。 2026-03-17 | 12/600 |
|
|
|
[考研] 299求調(diào)劑 +5 | shxchem 2026-03-20 | 7/350 |
|
|
|
[考研] 346求調(diào)劑[0856] +4 | WayneLim327 2026-03-16 | 7/350 |
|
|
|
[考研] 一志愿西南交大，求調(diào)劑 +5 | 材化逐夢(mèng)人 2026-03-18 | 5/250 |
|
|
|
[考研] 274求調(diào)劑 +10 | S.H1 2026-03-18 | 10/500 |
|
|
|
[考研] 求調(diào)劑 +3 | eation27 2026-03-20 | 3/150 |
|
|
|
[考研] 【同濟(jì)軟件】軟件（085405）考研求調(diào)劑 +3 | 2026eternal 2026-03-18 | 3/150 |
|
|
|
[考研] 085601求調(diào)劑 +4 | Du.11 2026-03-16 | 4/200 |
|
|
|
[考研] 有沒(méi)有道鐵/土木的想調(diào)劑南林，給自己招師弟中～ +3 | TqlXswl 2026-03-16 | 7/350 |
|
|
|
[論文投稿] 有沒(méi)有大佬發(fā)小論文能帶我個(gè)二作 +3 | 增銳漏人 2026-03-17 | 4/200 |
|