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| For an n-type oxide semiconductor, intrinsic oxygen vacancies are responsible for its electronic conductivity. The adsorption of oxidative gas species will creates extrinsic surface acceptor states that repel conduction band electrons, which results in lower conductivity, while reductive gas will cause reverse result. Therefore, the gases can be detected through monitoring the change of electronic conduction. Most of the present effort is being contributed to the improvement of sensitivity, selectivity, and long term stability of gas sensors. For a high sensitivity (i.e. great change in conductivity) and a fast response rate, the sensing material should exhibit large surface areas, and allow for good accessibility of the sensing material surface. To fulfill these requirements for gas sensors, one method is to decrease the size of sensor material, or to prepare porous structure for increasing the surface-to-volume ratio. Another route is to design and synthesize the nanostructure of sensing material exposing unique lattice planes [4], which would have stronger or selective absorption ability for detecting gases. |
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| 一個n型氧化物半導體,內(nèi)在氧氣導致其指定的電子電導。摘要利用氧化氣體物種將會創(chuàng)造外在表面受體狀態(tài),電子,使導帶排斥電導率處于較低,而還原氣體會導致相反的結(jié)果。因此,毒氣可以通過監(jiān)測的變化檢測電子導電。大多數(shù)的現(xiàn)狀,分析了正在努力改善靈敏度、選擇性、和長期穩(wěn)定的氣體傳感器。高敏感性(即巨大變化的快速反應(yīng)和導電率、傳感資料應(yīng)當顯示大的表面積,讓良好的可訪問性的感應(yīng)材料表面。達到這些要求,氣體傳感器,提出一種確定的大小是降低傳感器材料,或準備的孔隙結(jié)構(gòu)提高surface-to-volume比率。另一條路是設(shè)計和合成納米傳感材料暴露獨特的晶格層[4],這將有較強的或選擇性吸收能力檢測的氣體。 |
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對于n型氧化物半導體,其固有氧空穴影響著材料導電率。吸收氧化性氣體會產(chǎn)生非本征的表面受體狀態(tài)并排斥導帶電子,從而引起導電率下降。而還原性氣體影響與此相反。因此,可以通過監(jiān)測導電率的變化檢測氣體。當前大多數(shù)研究在于提升氣體傳感器的靈敏度,選擇性和穩(wěn)定性。要實現(xiàn)高的靈敏度(即大的導電率變化)和快速響應(yīng),感應(yīng)材料必須有大的接觸面,并且易于和被偵測氣體接觸。為了實現(xiàn)氣體傳感器上述要求,一是要減小感應(yīng)材料的體積,或者采用多孔結(jié)構(gòu)以提高表面積與體積比。二是制造具有特定晶面的納米結(jié)構(gòu)感應(yīng)材料,以得到更強的或選擇性的氣體吸收。 這mm掛了問題就一周不上線,不會是水貼吧? |
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