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透明導(dǎo)電氧化物薄膜具有高的電導(dǎo)率和高的光透過率,因而成為了科研和工業(yè)上的重點(diǎn)研究課題。重點(diǎn)體現(xiàn)在TCOs作為透明導(dǎo)電電極在光電子太陽能,平板顯示,有機(jī)發(fā)光二極管等領(lǐng)域都有大量應(yīng)用。其中,Sn摻雜In2O3 是應(yīng)用最為廣泛的材料。但是由于金屬銦的匱乏及高昂的價格,限制了其在透明電極的應(yīng)用,因而急需尋求新的替代材料。這種替代材料的電阻率應(yīng)該在~10-3 Ω cm數(shù)量級或更小,在近紫外-可見光范圍內(nèi)的透過率大于80%,光學(xué)禁帶寬度應(yīng)在3 eV左右。目前,摻雜的TiO和SnO薄膜是替代ITO的最佳選擇,因?yàn)樗鼈兊碾娮杪识驾^低,在500-600 nm可見光范圍內(nèi)的平均透光率達(dá)到85%,而且它們原材料價格低廉,可以大規(guī)模生產(chǎn)。TiO基和SnO基薄膜都可廣泛應(yīng)用于顯示、探測器、抗反射涂層、氣敏傳感器、光電、電致變色器件等領(lǐng)域。因此,研究TiO基和SnO基透明導(dǎo)電氧化物薄膜的光學(xué)和電學(xué)性能具有重要的意義。 綜上所述,本論文從兩個基本點(diǎn)出發(fā):一、如何進(jìn)一步降低薄膜的電阻率;二、如何有效的改變薄膜的禁帶寬度。重點(diǎn)研究了不同In、Sn含量摻雜TiO薄膜的結(jié)構(gòu)、形貌、電學(xué)以及光學(xué)性質(zhì)。另外,SnO與TiO都是同一族氧化物半導(dǎo)體,它們具有相似的半導(dǎo)體特性,所以本文對摻雜的SnO基薄膜及與TiO的復(fù)合薄膜也進(jìn)行了深入的研究和探討。利用X射線衍射儀(XRD)、場發(fā)射掃描電子顯微鏡(FE-SEM)和X射線光電子能譜(XPS)對薄膜的成分和微觀組織進(jìn)行了分析和觀察。并利用紫外-可見光分光光度計、光致發(fā)光和霍爾效應(yīng)儀對薄膜的光學(xué)和電學(xué)性能進(jìn)行了表征。 |
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Transparent conductive oxide film has high conductivity and high light through rate so that it becomes the key research projects of research and industry . The key is reflected in TCOs as transparent conductive electrodes have lots of applications in photoelectron solar, flat panel display, organic light emitting diode, etc . Among them, Tin doped Indium2O3 is the most widely used materials. But because of high prices and the lack of indium that limits its application in transparent electrodes, we are seeking new alternative materials. This alternative materials,whose resistivity should in ~ 10- 3Ωcm orders of magnitude or smaller, through rate of near ultraviolet - visible range greater than 80%, optical forbidden band width should be about 3 eV.At present the film of the dopped Tin oxide and Tianium oxide is the best choice to replace ITO because their resistivity are low, within the scope of 500-600 nm visible light transmittance is 85 percent on average, and their of raw materials have low prices and they can become mass production.Titanium oxide and Tin oxide base film can be widely used in the aeras of display, detectors, antireflection coating, gas sensors, photoelectricity, electrochromic devices, etc. Therefore, the study of optical and electrical properties of Titanium oxide and Tin oxide base transparent conductive oxides film has the vital significance. To sum up, this paper has two basic points: Firstly, how to further reduce the resistivity of the film; Secondly, how to effectively change the forbidden band width of thin film.The key research is structure, doping morphology, electrical and optical properties of the different dopped content of Indium and Tin dop TiO film. In addition, because Titanium oxide and Tin oxide are the same gens oxide semiconductor rand they have similar features, so Titanium oxide base thin films and Tin oxide composite film also studied and discussed in this paper. Using XRD, SEM and XPS to analyze and observe the composition and microstructure of the thin film. And by using ultraviolet - visible spectrophotometer, light to shine and hall effect apparatus on the optical and electrical performance films are also investigated. |
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