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young1105金蟲(chóng) (初入文壇)
young
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[求助]
英文摘要潤(rùn)色（電子類）
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本人有一篇中文摘要，個(gè)人感覺(jué)翻譯的不是很好，希望蟲(chóng)友們潤(rùn)色一下，謝謝 以典型的Si基n+-p-n-n+雙極晶體管為對(duì)象，通過(guò)微波注入方式，從器件內(nèi)部電場(chǎng)強(qiáng)度、電流密度和溫度的分布變化出發(fā)研究其在高功率微波作用下的內(nèi)在失效機(jī)理。利用線性擬合方法得到了損傷功率和脈寬之間的關(guān)系。研究表明，高功率微波對(duì)雙極晶體管損傷部位是B-E結(jié)。燒毀點(diǎn)升溫主要集中在信號(hào)負(fù)半周著信號(hào)注入幅度的不斷增加，在正半周期燒毀點(diǎn)溫度下降幅度越來(lái)越慢，注入幅度增加到一定值時(shí)，溫度有小幅升高。損傷功率和脈寬公式和短脈沖經(jīng)驗(yàn)公式符合的很好，從而驗(yàn)證了器件模型的合理性。 In this paper the study of high power microwave injection effect and internal damage mechanism of the typical n+-p-n-n+ structure bipolar transistor is investigated from the variation distribution of the electric field, the current density and the temperature. The relationship between the burnout time and the damage power is obtained using the curve fitting method. Results indicate that the damage position of the bipolar transistor is the base-emitter junction where the temperature rising is focus in the negative half-period. In the positive half-period, as the injected signal peak increases, the magnitude of the temperature falling in the damage position decreases but the temperature rises slightly when the injected singal peak increases to a certain value. The relationship of the damage power and the burnout time fits well with the empirical formulas which proved the accuracy of our model. |
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young1105
金蟲(chóng) (初入文壇)
young
- 應(yīng)助: 0 (幼兒園)
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- 蟲(chóng)號(hào): 843388
- 注冊(cè): 2009-09-08
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- 專業(yè): 半導(dǎo)體電子器件
3樓2011-04-18 09:37:52
zerohead
禁蟲(chóng) (職業(yè)作家)
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【答案】應(yīng)助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
young1105(金幣+10, 翻譯EPI+1): 3Q~能否幫忙把摘要都潤(rùn)色一下，我的要求是不是太過(guò)分了，呵呵 2011-04-14 21:52:10
sltmac(金幣+20): 謝謝交流~~~ 2011-04-18 11:16:55
young1105(金幣+10, 翻譯EPI+1): 3Q~能否幫忙把摘要都潤(rùn)色一下，我的要求是不是太過(guò)分了，呵呵 2011-04-14 21:52:10
sltmac(金幣+20): 謝謝交流~~~ 2011-04-18 11:16:55
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The first sentence is modified as below: 以典型的Si基n+-p-n-n+雙極晶體管為對(duì)象，通過(guò)微波注入方式，從器件內(nèi)部電場(chǎng)強(qiáng)度、電流密度和溫度的分布變化出發(fā)研究其在高功率微波作用下的內(nèi)在失效機(jī)理。 In this paper, the internal damage mechanism of the typical Si based n+-p-n-n+ structured bipolar transistor under high power microwave injection is investigated by studying the variation and distribution of the electric field, current density and temperature inside the transistor. |
2樓2011-04-14 20:11:27
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