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文章題目:High-Efficiency HIT Solar Cell on Thin (<100 μm) Silicon Wafer 作者:M. Taguchi, Y. Tsunomura, H. Inoue, S. Taira, T. Nakashima, T. Baba, H. Sakata, E. Maruyama 關鍵詞:c-Si, Heterojunction, Amorphous Si 其他信息:24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany 摘要:In order to reduce the power-generating cost of a silicon solar cell, it is necessary to use a thinner crystalline silicon (c-Si) wafer together with the excellent light trapping and well passivated surface that are essential for high-efficiency solar cells. The HIT (Heterojunction with Intrinsic Thin-layer) solar cell is an amorphous silicon (a-Si)/c-Si heterojunction solar cell that has these features. We have experimentally confirmed that the Voc of the HIT solar cell increased with decreases in the cell thickness and can reach more than 0.74 V. This indicates that the surface recombination velocity of the HIT structure is extremely low due to excellent passivation on the c-Si surface. A conversion efficiency of 22.8 % has been achieved with a 98-μm thick CZ c-Si (100.3-cm2) cell. 此文相關信息的一個網(wǎng)絡鏈接:https://www.eupvsec-proceedings. ... ar=H&paper=4112 [ Last edited by liuronglin on 2011-4-15 at 19:16 ] |
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