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zhigang985銀蟲 (小有名氣)
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[求助]
無機(jī)化學(xué),請教高手翻譯一段話.不勝感激。
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| 根據(jù)半導(dǎo)體材料的光吸收邊波長與帶隙能Eg的關(guān)系:λ(nm)=1240/Eg(eV)可知,300 K時體相的X的吸收邊為689 nm,處在紅光的波長范圍,說明其可以吸收紫外和可見光。同時,進(jìn)一步說明X在光電材料領(lǐng)域有潛在的應(yīng)用前景,尤其在可見光區(qū)的光催化方面具有廣闊的應(yīng)用空間。 |

榮譽(yù)版主 (職業(yè)作家)
木蟲講師
| According to the relationship between the edge of optical absorption with band gap energy Eg wavelength in the semiconductor materials: λ (nm) = 1240/Eg (eV), it showed that at 300 K , the bulk absorption edge of X was 689 nm, and the wavelength range was in the red spectra area , indicating that it could absorb UV and visible light. Meanwhile, it could further showed that X had a broad potential applications in the field of optoelectronic materials, , especially in the visible-light photocatalytic applications. |

至尊木蟲 (著名寫手)
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根據(jù)半導(dǎo)體材料的光吸收邊波長與帶隙能Eg的關(guān)系:λ(nm)=1240/Eg(eV)可知,300 K時體相的X的吸收邊為689 nm,處在紅光的波長范圍,說明其可以吸收紫外和可見光。同時,進(jìn)一步說明X在光電材料領(lǐng)域有潛在的應(yīng)用前景,尤其在可見光區(qū)的光催化方面具有廣闊的應(yīng)用空間。 according to the relationship between the optical absorption edge and band gap of semiconductors, λ(nm)=1240/Eg, the absorption edge of X at 300 K is at 689 nm in the red region indicating the ability to absorb uv and visible light, which further demostrate the potential applications of X in photoelectric materials, especially the promising applications as photocatalysts in the visible region. |
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