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王靈杰金蟲(chóng) (初入文壇)
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[求助]
200金幣求翻譯�。。。ú牧项�(lèi)，納米碳管）
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Graphene nanoribbons (GNRs) are materials with properties distinct from those of other carbon allotropes1–5. The all-semiconducting nature of sub-10-nm GNRs could bypass the problem of the extreme chirality dependence of the metal or semiconductor nature of carbon nanotubes (CNTs) in future electronics1,2.Currently, making GNRs using lithographic3,4,6, chemical7–9 or sonochemical1 methods is challenging. It is difficult to obtain GNRs with smooth edges and controllable widths at high yields.Here we show an approach to making GNRs by unzipping multiwalled carbon nanotubes by plasma etching of nanotubes partly embedded in a polymer film. The GNRs have smooth edges and a narrow width distribution (10–20 nm). Raman spectroscopy and electrical transport measurements reveal the high quality of the GNRs. Unzipping CNTs with well-defined structures in an array will allow the production of GNRs with controlled widths, edge structures, placement and alignment in a scalable fashion for device integration. The high carrier mobility of graphene10–14 offers the possibility of building high-performance graphene-based electronics. Recently, both theoretical15–18 and experimental1–4 works have shown that quantum confinement and edge effects introduce a band gap in narrowgraphene ribbons independent of chirality, and the resulting GNR semiconductors can be used to make field-effect transistors. Several approaches have been developed to obtain GNRs. Lithographic patterning has been used to produce wide ribbons (.20nm) from graphene sheets3,4, but the width and smoothness of the GNRs were limited by the resolution of the lithography and etching techniques.Bulkamounts of wide (20–300nm) and few-layered (2–40)GNRswere synthesized by a chemical vapour deposition method9. A chemical sonication route developed by our group produced sub-10-nm GNR semiconductors from intercalated and exfoliated graphite1. However,the yield of GNRs was low and their width distribution was broad;widths ranged from less than 10nm to ,100 nm. [ Last edited by 王靈杰 on 2011-6-1 at 12:12 ] |
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8814402
至尊木蟲(chóng) (職業(yè)作家)
- 翻譯EPI: 509
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- 注冊(cè): 2011-01-06
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【答案】應(yīng)助回帖
★ ★
Mally89(金幣+2): 感謝應(yīng)助！~ 2011-06-01 18:40:32
Mally89(金幣+2): 感謝應(yīng)助！~ 2011-06-01 18:40:32
| Graphene nano ribbons (GNRs) are materials with properties distinct from those of other carbon allotropes1–5. 石墨烯納米帶(GNR)是一種具有與其他碳同素異形體截然不同特性的材料.The all-semiconducting nature of sub-10-nm GNRs could bypass the problem of the extreme chirality dependence of the metal or semiconductor nature of carbon nanotubes (CNTs) in future electronics1,2. 10nm以下GNR的完全半導(dǎo)體特性可在未來(lái)的電子工業(yè)中使用以繞開(kāi)金屬的極端手性依賴(lài)或碳納米管半導(dǎo)體特性問(wèn)題.Currently, making GNRs using lithographic3,4,6, chemical7–9 or sonochemical1 methods is challenging. 目前,通過(guò)平板印刷、化學(xué)或聲化學(xué)方法制備GNR都面臨挑戰(zhàn)。It is difficult to obtain GNRs with smooth edges and controllable widths at high yields. 很難以高產(chǎn)率獲得邊緣平滑、寬度可控的GNR。Here we show an approach to making GNRs by unzipping multiwalled carbon nanotubes by plasma etching of nanotubes partly embedded in a polymer film. 這里我們展示一種制備GNR的方法：通過(guò)等離子蝕刻部分固定在聚合物膜上的納米管剝開(kāi)多層壁的碳納米管。The GNRs have smooth edges and a narrow width distribution (10–20 nm). 此法制備的GNR具有平滑的邊緣和窄的寬度分布（10-20nm）。Raman spectroscopy and electrical transport measurements reveal the high quality of the GNRs. 拉曼光譜和電運(yùn)載測(cè)定顯示了這類(lèi)GNR優(yōu)良的質(zhì)量。Unzipping CNTs with well-defined structures in an array will allow the production of GNRs with controlled widths, edge structures, placement and alignment in a scalable fashion for device integration.剝開(kāi)陣列排布結(jié)構(gòu)明確的碳納米管使得制備設(shè)備集成可用的寬度、邊緣結(jié)構(gòu)可控、以可調(diào)節(jié)方式布局和定位的GNR成為可能。 |
2樓2011-06-01 16:39:40
8814402
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王靈杰(金幣+200, 翻譯EPI+1): 謝謝啊，非常感謝啊��！ 2011-06-01 20:53:48
| The high carrier mobility of graphene10–14 offers the possibility of building high-performance graphene-based electronics. 石墨烯的高載子移動(dòng)率提供了構(gòu)建高性能石墨烯電子產(chǎn)品的可能性。Recently, both theoretical15–18 and experimental1–4 works have shown that quantum confinement and edge effects introduce a band gap in narrow graphene ribbons independent of chirality, and the resulting GNR semiconductors can be used to make field-effect transistors.近來(lái)，理論和實(shí)驗(yàn)研究工作都顯示，量子限制和邊緣效應(yīng)在窄石墨烯帶引入不受手性支配的帶隙。 Several approaches have been developed to obtain GNRs.已開(kāi)發(fā)了幾種獲取GNR的途徑。 Lithographic patterning has been used to produce wide ribbons (.20nm) from graphene sheets3,4, but the width and smoothness of the GNRs were limited by the resolution of the lithography and etching techniques. 平版印刷蝕刻技術(shù)被用來(lái)由石墨烯片制備寬帶，但其制備的GNR的寬度和平滑度受限于平版印刷和蝕刻技術(shù)的分辨率。Bulk amounts of wide (20–300nm) and few-layered (2–40)GNRs were synthesized by a chemical vapour deposition method9.用化學(xué)蒸氣沉淀方法合成了大量 寬度為20-300nm的少數(shù)層（2-40）GNR。A chemical sonication route developed by our group produced sub-10-nm GNR semiconductors from intercalated and exfoliated graphite1.一種由我們課題組開(kāi)發(fā)的化學(xué)超聲路線可由插入和片狀剝落的石墨烯制備10nm以下的GNR半導(dǎo)體。 However,the yield of GNRs was low and their width distribution was broad;widths ranged from less than 10nm to ,100 nm.然而，此法制備GNR的產(chǎn)率低且寬度分布較寬，寬度可由不足10nm到100nm。 |
3樓2011-06-01 17:03:30
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