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yanjiao12新蟲 (初入文壇)
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[求助]
聚合物/ZnO太陽能復(fù)合電池 將部分引言翻譯成中文
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For example,it is believed that the high concentration of surface defects will increase the carrier recombination at the D/A interface and frequently reduce the device performance, but no reports on the electron lifetime related to the structural properties of ZnO nanorods are available for the polymer/ZnO nanorod array devices, except for the observation of a remarkably slow charge recombination with a half-life of several milliseconds in such devices with dye-sensitized ZnO nanorods by transient absorption spectroscopy. Herein, we study the effects of the structural properties of ZnO nanorods on the charge recombination and device perfor manceinthesolarcellsconsistingofpoly(1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene) (MEH-PPV) and vertically aligned ZnO nanorod arrays. The high quality ZnO nanorod arrays were prepared by electrodeposition, where the ZnO nanorod length (Ln) and concentration of deep level defects were controlled by deposition time (Td); the electron lifetime (τe) related to the interfacial charge recombination in the MEH-PPV/ZnO device was obtained by intensity modulated photovoltage spectroscopy (IMVS). The results demonstrate that the photocurrent and recombination rate in such devices are mainly dependent on Ln rather than the defect concentration, and that both charge recombination and intraband defects impose influences on the open circuit voltage (Voc) of the devices but Voc is much more sensitive to the defect concentration. [ Last edited by yanjiao12 on 2011-7-12 at 16:40 ] |
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sltmac
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2樓2011-07-12 16:54:47
sltmac
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【答案】應(yīng)助回帖
yanjiao12(金幣+40, 翻譯EPI+1): 謝謝高手喔 2011-07-12 19:35:22
yanjiao12(金幣+10): 好啊 2011-07-12 19:49:50
yanjiao12(金幣+10): 好啊 2011-07-12 19:49:50
| 比如，通常認(rèn)為表面缺陷的高度集中會(huì)增加D/A表面載流子的再復(fù)合以及降低器件的性能，但沒有關(guān)于電子壽命與用來制備聚合物/ZnO器件的棒狀結(jié)構(gòu)性能關(guān)系的報(bào)道，除非通過瞬態(tài)吸收光譜能夠顯著地觀察到在幾毫秒內(nèi)電荷在器件中緩慢再復(fù)合的半衰期。鑒于此，我們研究了ZnO納米棒結(jié)構(gòu)性能對(duì)含有MEH-PPV太陽能電池性能的影響。這樣高質(zhì)量的ZnO納米棒是通過電沉積方法制備的，此ZnO納米棒的長度（Ln）以及缺陷集中程度可以通過沉積時(shí)間（Td）；電子壽命（Te）得到控制，其中電子壽命與MEH-PPV/ZnO器件中界面電荷的再復(fù)合有關(guān)，可以通過強(qiáng)度調(diào)制光電壓譜(IMVS)觀察到。結(jié)果表明，器件中的光電流以及電荷的再復(fù)合率取決于Ln而不是缺陷集中程度，電荷的再復(fù)合以及帶內(nèi)的缺陷對(duì)開路電壓（Voc）有很大的影響，但Voc對(duì)缺陷集中程度也很敏感。 |
3樓2011-07-12 17:14:01
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