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分享一篇最新的Science上關(guān)于氮摻雜單層石墨烯的文章
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題目:Visualizing Individual Nitrogen Dopants in Monolayer Graphene 摘要: In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration. |
先進(jìn)材料 | 石墨烯資源及問題集錦 | 石墨烯 | vasp |
納米材料 | 小貓滴貝殼 | 研究生 | 超電+碳 |
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