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295435736金蟲 (小有名氣)
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[求助]
請教一段話的翻譯---中翻英
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| 從圖5可以看出極板間SiH3摩爾分數呈非均勻性分布，即在襯底中心處濃度較高，而在邊緣處濃度較低。為了對沉積過程中復雜的物理和化學過程進行簡化，本文將反應室內SiH3摩爾分數分布近似為等離子體分布。由SiH3摩爾分數分布計算出極板間不同區(qū)域的等離子體相對介電常數，由此得出不同間距的極板電場分布如圖6所示。由于極板間距的增大，極板間流場分布的不均勻性也隨著增大，當加載射頻功率后，受駐波效應和邊緣效應的影響，電場分布的不均勻性也隨之增大。圖7中當極板間距為10 mm時，電場分布最為均勻，其非均勻性小于5%。 |
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alvarohao
鐵桿木蟲 (著名寫手)
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愛與雨下(金幣+1): 2011-10-29 11:54:08
295435736(金幣+75, 翻譯EPI+1): 都一般吧，改了好久 2011-10-29 15:29:17
愛與雨下(金幣+1): 2011-10-29 11:54:08
295435736(金幣+75, 翻譯EPI+1): 都一般吧，改了好久 2011-10-29 15:29:17
| As can be seen from Fig.5, the molar proportions of SiH3 between the polar plates had a non-uniform distribution, with densities higher in the center of the substrate and lower in its edges. In this paper, to simplify the complicated physical and chemical procedure of the deposition, the distribution of the SiH3 molar proportions in the reaction chamber was approximated as the plasma distribution. The plasma’s relative dielectric constants in different areas between the polar plates were calculated from the SiH3 molar proportions, and were used to obtain the electric field distributions of the polar plates with different intervals which were shown in Fig.6. Because of the increasing of the polar plates’ interval, the non uniformity of the flow field distribution between the polar plates was also increased, and when the radio frequency power was loaded, affected by the standing wave effect and the edge effect, the non uniformity of the electric field distribution was also increased. In Fig.7, when the interval between the polar plates was 10 mm, the uniformity of the electric field distribution was the biggest, with non uniformity less than 5%. |
2樓2011-10-29 11:47:21
tcollar
木蟲 (小有名氣)
水上漂
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愛與雨下(金幣+1): 2011-10-29 11:54:14
295435736(金幣+75): 都一般吧，改了好久 2011-10-29 15:29:36
愛與雨下(金幣+1): 2011-10-29 11:54:14
295435736(金幣+75): 都一般吧，改了好久 2011-10-29 15:29:36
| Figure 5 shows that the molar fraction distribution of SiH3 was not uniform in between the cathode and anode. More SiH3 can be found around the center of the base plate and less around the edges. To simplify the description of the deposition process, the molar fraction distribution of SiH3 is assumed to be plasma density distribution. The relative dielectric constants of the plasma in between the cathode and anode are calculated based on the molar fraction distribution of SiH3, from which electric field distribution is derived, as depicted in Figure 6. As the distance between the cathode and anode rises, the inhomogeneity of the electric field increases. On the other hand, standing wave effect and edge effect induced by the radio frequency also contribute to the inhomogeneity of the electric field. When the anode is 10 mm away from the cathode, the most homogeneous electric field is achieved, with inhomogeneity<5% (Figure 7). |
3樓2011-10-29 11:49:30
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