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jiayou201101金蟲(chóng) (著名寫(xiě)手)
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[求助]
請(qǐng)幫忙翻譯一句話(huà)，謝謝�。。�
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請(qǐng)幫忙把下面一句話(huà)翻譯成英文，謝謝！�。ㄏ嚓P(guān)術(shù)語(yǔ)已放在下面）： 值得一提的是，在Hf的濃度達(dá)到8mol%時(shí)，抗光散射能力均有一定程度的減弱，對(duì)這個(gè)現(xiàn)象，我們認(rèn)為，在晶體中高摻雜Hf4+時(shí)，會(huì)有過(guò)多的Hf4+開(kāi)始占據(jù)正常的Li位，晶體內(nèi)部出現(xiàn)新的缺陷鋰空位( )，由于鋰空位( )的增加，導(dǎo)致晶體的抗光散射能力減弱。 （專(zhuān)業(yè)術(shù)語(yǔ)的翻譯附上： 晶體：crystals，抗光散射能力：resistance to light-induced scattering，缺陷：defect，濃度：concentration ，鋰空位缺陷：Li vacancy defects） |
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zhaoqinglu05
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【答案】應(yīng)助回帖
jiayou201101(金幣+30, 翻譯EPI+1): ★★★★★最佳答案 下面還有個(gè)朋友幫忙翻譯，分給他10個(gè)吧，謝謝你新年快樂(lè) 2012-01-26 17:56:08
我的翻譯如下，應(yīng)該對(duì)你有所幫助. It is to note that there is a certain degree of weakening of all the resistance to light-induced scattering with the concentration of 8mol% of Hf. This phenomenon make us think that there will be too much Hf4+ begin to take normal the Li position in the crystals with highly doped Hf4+. In addition, novel Li vacancy defects () can be found within the crystals, and as the number of the Li vacancy defects increases, the resistance to light-induced scattering of the crystals decreased accordingly. |
2樓2012-01-26 10:00:18
【答案】應(yīng)助回帖
jiayou201101(金幣+10): ★★★★★最佳答案 比你早一些有朋友幫忙翻譯，分給你10個(gè)吧，新年快樂(lè) 2012-01-26 17:56:35
| It is noticed that there is a certain degree of weakening of the resistance to light-induced scattering when the concentration of Hf reaches 8 mol% . This phenomenon may due to the over supplied Hf4+ begin to take the normal Li position in the crystals with highly dosed Hf4+ and form novel Li vacancy defects () within the crystals. As the number of the Li vacancy defects increases, the resistance to light-induced scattering of the crystals decreased accordingly. |
3樓2012-01-26 11:08:17
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