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jxlcwy鐵桿木蟲(chóng) (著名寫(xiě)手)
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[求助]
求翻譯
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從各個(gè)試樣的阻抗譜分析譜(圖5)可以看出,在測(cè)試頻率為20 kHz一1 MHz的寬頻范圍內(nèi),各個(gè)樣品的復(fù)阻抗譜都存在兩段半圓弧,而且隨著SiO2含量的增大,各個(gè)試樣半圓弧的位置依次明顯向電阻增大的方向移動(dòng),并且其圓弧半徑也相應(yīng)隨之增大,據(jù)此則可以推斷晶界電阻隨SiO2含量的增多而明顯增大。從圖5中的內(nèi)插圖可以看出,當(dāng)延長(zhǎng)高頻端所對(duì)應(yīng)的半圓弧與Z′軸相交時(shí),各個(gè)交點(diǎn)將聚集在大致相同的位置,由此可以推斷出各個(gè)試樣的晶粒電阻變化不大。所以,介電損耗的降低主要是由于SiO2的加入,使陶瓷內(nèi)部晶界電阻增大而提高了CCTO陶瓷內(nèi)部晶粒之間絕緣性所致。 求大蝦幫忙翻譯這段,不要用軟件翻譯的,那樣語(yǔ)序完全不對(duì)。謝謝高手來(lái)幫忙了! |

| From each specimen impedance spectrum analysis spectrum (Figure 5) can be seen, the complex impedance spectra of various samples within the range of the test frequency of 20 kHz to 1 MHz broadband , there are two semi-circular arc , and with the SiO2 content increases, moving the location of each sample semi- circular arc in turn significantly to the increase in electrical resistance , and its radius corresponding increases accordingly you can infer that the grain boundary resistance significantly increased with the increase of SiO2 content .It can be seen from within the illustration in Figure 5 , when to extend the high frequency end of the corresponding semi- circular arc with the Z ' axis intersect each intersection will be gathered in much the same position , which can infer the grain of each specimen resistance little change.Therefore, the dielectric loss of SiO2 in ceramic internal grain boundary resistance increases and improved due to the insulation between the CCTO ceramic internal grain . |
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