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請教MOF導(dǎo)電及mof晶體缺陷方面的問題
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Solid solution of metal ions, by the substitution of metal ions (Fe3+ in Fe2+ framework for instance) to form the defect for the charge carriers, in order to incorporate O2- or H+ which is mobile in MOF framework. question: why it is possible to have O2- or H+ by use of Fe2+/Fe3+? 其實上面一段英文表述和問題的意思我也沒搞明白,所以都無從下手。是有關(guān)高溫下MOF導(dǎo)電性的。晶體缺陷,固溶體,自己就一小白;所以針對上面的問題,希望大家給點意見,小弟不勝感激。∮邢嚓P(guān)文獻(xiàn)可以推薦下最好~先謝謝了 |
晶體生長合成專輯 |
» 搶金幣啦!回帖就可以得到:
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金屬離子的固溶體,通過金屬離子替換(向二價鐵的骨架結(jié)構(gòu)中加入三價鐵為例)形成電荷載體的缺陷,將O2- or H+引入MOF中并自由移動。 問題:為什么通過不等價離子的替換可以有O2- or H+在骨架中自由移動。 I think it’s because the generation of oxygen vacancies. (A large number of the ions of one species should be mobile. This requires a large number of empty sites, either vacancies or accessible interstitial sites.) Lewis acidic ferrous ions have the potential to promote elimination of a proton from the coordination acid (Phosphorus oxoacids/phosphates), make the proton mobile in the oxygen vacancies. The O2- would be mobile in the the oxygen vacancies by inducing Fe2O3. |
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