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| 通常吸附劑表面存在著兩類不同吸附點(diǎn)位,即高結(jié)合能點(diǎn)位和低結(jié)合能點(diǎn)位。當(dāng)初始濃度較低時,Cr(VI)和Ni(II)首先被吸附至高結(jié)合能點(diǎn)位上,由于其吸附密度低,離子間的斥力較小,因此濃度的變化對去除率的影響不明顯。隨著初始濃度的增加,高結(jié)合能的點(diǎn)位逐漸飽和,更多的低結(jié)合能的點(diǎn)位開始吸附Cr(VI)和Ni(II),且吸附密度變大,離子間的斥力增加,導(dǎo)致了去除率的明顯下降。 |

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米米
| Usually absorbents have two different absorption points on surface, the high binding energy point and low binding energy point. When the initial concentration is low, Cr(VI) and Ni(II) firstly attach to high binding energy point. Due to the low absorption density, repulsion between ions are relatively low so the change of concentration has least effects on removal percentages. With initial concentration increased, high binding energy point gets saturated and more low ones start to absorb Cr(VI) and Ni(II) while low points absorption density gets larger and ions repulsion increases, which leads to dramatic decrease in removal percentage. |
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