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北京石油化工學(xué)院2026年研究生招生接收調(diào)劑公告

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1樓 2012-11-21 09:51:17

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淡淡de想念

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論壇里有專用于翻譯的軟件，對英文不好的人是一大利器。

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既然選擇了遠方，就只管風(fēng)雨兼程

5樓2012-11-21 11:46:36

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intfreedom

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用google文獻翻譯吧~！然后自己稍微調(diào)整下就差不多了~！

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2樓2012-11-21 10:33:01

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helena-yi

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樓上正解！
要別人翻譯的話、、、加點兒BB吧

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狂花落葉，從容自若————雙面兔

3樓2012-11-21 11:07:26

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helena-yi

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★
Carena: 金幣+1, 感謝應(yīng)助，有空請幫忙翻譯完全。 2012-11-21 12:10:27

Due to the doping of aluminum ions, particle size of ZnO was significantly minimized, which resulted in two promotive effect to its photocatalytic reaction. On one hand, a wider energy gap with lower potential on conduction band and higher potential on valence band was gained due to smaller partical size, redox ability enhanced and photocatalytic activity increased.
On the other hand, the surface area is increased, which would promote the photocatalytic reaction proceeds because of the enhanced adsorption substrates ability.

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狂花落葉，從容自若————雙面兔

4樓2012-11-21 11:34:56

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527712697

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這個有點專業(yè)的可以找一下你們的導(dǎo)師什么的對他們就很簡單了

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全心全意去辦成一件事把，少年

6樓2012-11-22 09:58:43

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小小燒餅

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這文章好長啊，有難度，放棄算了

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冰凍三尺，非一日之寒

7樓2012-12-03 18:02:07

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james.bond

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★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
220chengeng: 金幣+30, 翻譯EPI+1, 感謝應(yīng)助，辛苦了。 2012-12-28 16:40:21

人工翻，見笑了。

This is because the incorporation of the aluminum ions has significantly miniaturized the partical size of ZnO. When the particle size of zinc oxide becomes smaller, the energy gap widens causing the conduction band to be more negative, thus, the valence band becomes more positive resulting in stronger oxidation ability and improves the photocatalytic activity. At the mean time, the particle diameter reduction of nano zinc oxide resulted in the increase of surface area and the related substrate adsorption ability, which could also promote the photocatalytic reaction. Further, from chemical viewpoint, the dopant ions are effective electron acceptor, with ability of capturing the electrons from the conduction band.
Due to the absorption towards electrons by the dopant ions, the combination between the light-generated electrons e- on the semiconductor surface and the photogenerated holes h+ is reduced. Therefore, it generated more 0H • and • O2 on the semiconductor surface, improving the activity of the catalyst. The doping of aluminum ion made it the capture trap for electron and cavity, causing the reduced recombination of electrons and holes as well as the increase of OH • life. When the doping amount is smaller than the optimum doping concentration, as the doping amount increases, the amount of capture traps generated by dopant ions increases, the suppression capability on the recombination between electrons and holes enhanced, so that photocatalytic ability improves. When the dopant amount is greater than the optimum amount, due to the reduction of capture distance between the current carriers, the dopant ions will become the recombination centers for the electrons and holes. Besides, excessive amount of the doping ions also may produce a new phase because of its saturation in the ZnO, which would reduce the effective surface area of the ZnO, and affects the efficiency of the photocatalysis. From the viewpoint of micro-structure and lattice distortion, the incproration of Al3+ in ZnO substrate could be either to substitute metal ion Zn2+, or to exist in the interstitial position between ZnO lattices. Because the ionic radius of aluminum (0.054nm) is smaller than that of zinc (0 .074 nm), it will causee local distortion of the crystal lattice. The energy band structure will change due to the doping by aluminum, i.e. energy gap widens leading to the increasing oxidation capacity of ZnO. Furthermore, since there is a large lattice distortion and strain energy, in order to compensate this energy and distortion, the oxygen on the surface of ZnO can easily escape the lattice and play the role of hole trapping, which also reduces the recombination possibility between electron-hole pairs, thus improving the catalytic activity of ZnO.

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研究方向：人工單晶,x射線行貌學(xué)，X射線多重衍射，x射線精細結(jié)構(gòu)分析，晶體模擬

8樓2012-12-15 22:18:07

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dovejay

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這東西還是自己翻譯比較好，看些這方面的英文文獻這段話就好翻譯了最近在忙做文獻匯報，要不就給你譯一下了

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9樓2012-12-22 14:36:14

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sklyer_123

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★ ★ ★ ★ ★
220chengeng: 金幣+5, 雖然做了修改，但是還是有機器翻譯的痕跡，翻譯絕對不是google再調(diào)整。 2012-12-28 16:41:20

This is because the aluminium ion doping, ZnO particle size was fine. Nanometer zinc oxide particle size becomes smaller, the energy gap widens, the conduction band and valence band becomes more negative potential, potential becomes corrections, get stronger redox ability, thus improve the photocatalytic activity. At the same time, nanometer zinc oxide with decreasing the particle size, surface area is increased, the adsorption substrate ability enhancement, can promote the photocatalytic reaction of. In addition, from the chemical point of view, dopant ions is effective electron acceptor, can capture the electrons in the conduction band. Because the ion doping on electronic contention, reduce the surface of the semiconductor optical electronic e- and photoinduced hole h+ compound, so that the surface of the semiconductor to produce more 0H and O2, increase the activity of the catalyst . Aluminum ion doped to become the electron-hole capture trap, can reduce the electron and hole composite, extended OH life. When doping concentration less than optimal amount, with the doping quantity increase, doping ions provided capture trap number increases, the electron - hole recombination suppression ability enhancement, photocatalytic ability improvement . When it is greater than the best quantity, due to capture carrier capture a distance between small, dopant ions become electron-hole recombination center, and the larger amount of dopant may also make the dopant ions in ZnO saturation and produce new phase, reducing the ZnO of the effective surface area, thereby affecting photocatalytic efficiency. The microstructure and lattice distortion of view, Al3+ doped with Z n O matrix, a may be aluminum ion substitution of metal ions Z n, another may be aluminum ion in matrix Z nO gap position. Because the aluminum ion radius 0.054nm than zinc ion radius 0.074 nm small, thus causing local lattice distortion, the Al doped Z n O band structure change, gap width, thereby improving Z n O redox ability. In addition, due to the presence of large lattice distortion and strain energy, to compensate for the lattice strain, Z n O character of surface oxygen atom lattice so as to easily escape hole trapping effect, reduce the electron-hole pair recombination rate, thus improve the photocatalytic activity of O Z n.

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只要努力就會更加接近成功，加油，親愛的自己

10樓2012-12-24 22:50:41

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