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xiejf專家顧問 (文學(xué)泰斗)
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[資源]
Nature最新研究進(jìn)展:可調(diào)控性質(zhì)的納米線的連續(xù)氣相合成
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最新一期的Nature雜志刊發(fā)了瑞典隆德大學(xué)科學(xué)家的研究成果。通過可控的利用金氣溶膠作為引導(dǎo)劑,實(shí)現(xiàn)了半導(dǎo)體納米線的快速連續(xù)的氣相合成,生長(zhǎng)速度達(dá)到驚人的1μm/s,且能實(shí)現(xiàn)半導(dǎo)體納米線性能的調(diào)控。該工作對(duì)納米線合成的工業(yè)化起到了推動(dòng)作用。 Semiconductor nanowires are key building blocks for the next generation of light-emitting diodes1, solar cells2 and batteries3. To fabricate functional nanowire-based devices on an industrial scale requires an efficient methodology that enables the mass production of nanowires with perfect crystallinity, reproducible and controlled dimensions and material composition, and low cost. So far there have been no reports of reliable methods that can satisfy all of these requirements. Here we show how aerotaxy, an aerosolbased growth method4, can be used to grow nanowires continuously with controlled nanoscale dimensions, a high degree of crystallinity and at a remarkable growth rate. In our aerotaxy approach, catalytic size-selected Au aerosol particles induce nucleation and growth of GaAs nanowires with a growth rate of about 1 micrometre per second, which is 20 to 1,000 times higher than previously reported for traditional, substrate-based growth of nanowires made of group III–V materials5–7. We demonstrate that the method allows sensitive and reproducible control of the nanowire dimensions and shape—and, thus, controlled optical and electronic properties—through the variation of growth temperature, time and Au particle size. Photoluminescence measurements reveal that even as-grown nanowires have good optical properties and excellent spectral uniformity. Detailed transmission electron microscopy investigations showthat our aerotaxy-grown nanowires formalong one of the four equivalent Æ111æB crystallographic directions in the zincblende unit cell, which is also the preferred growth direction for III–V nanowires seeded by Au particles on a singlecrystal substrate. The reported continuous and potentially highthroughput method can be expected substantially to reduce the cost of producing high-quality nanowires and may enable the lowcost fabrication of nanowire-based devices on an industrial scale. 。 nature11652-f1.2.jpg nature11652-f2.2.jpg [ 來自科研家族 材料家族 ] |








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