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liguo.920新蟲 (初入文壇)
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[求助]
電化學(xué)阻抗譜分析求助,急啊!
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本人最近投了一篇JSEL雜志,一位審稿人對(duì)文章中阻抗譜分析部分返回的意見如下: Unfortunately, the discussion of impedance measurements is always unsatisfaying. There is a fundamental misunderstanding about the concept of constant phase element (CPE). The definition given by Eq.2 is correct, but Cdl is never in unit of Farad but in Fs^n, because pulsation w is in s^-1, and w^n in s^-n! Then comparing Cdl values corresponding to different values of n is totally meaningless. As a consequence, Table 1 is not acceptable in the present form for the following reasons: 1/ Cdl is not in mF and cannot be identified as the double layer capacitance; 2/ n values are of the order of 0.7 suggesting the layer to be porous: the CPE representation leads to a good fit but remains purely formal without direct information about physical quantities. More sophisticated impedance models could be considered to get information on interfacial quantities of interest. 3/ The Cf parameter with so high values is hardly attribuable to an actual film capacitance. Knowing that the dielectric permittivity of tin oxide turns around 10, a 1 m thick layer would have a 10 nF/cm2 capacitance, and 10 F/cm2 if 1 nm thick only! Never in mF. In conclusion, frequency analysis of impedance data according to the electrical circuit in Fig.5 is purely formal, with the consequence that the parameters in Table 1 have no physical meaning. 看到審稿意見我頓時(shí)懵了,我對(duì)這么專業(yè)的EIS分析實(shí)在是不懂啊。本人做的是二氧化錫電極材料,在鈦基底表面涂覆一中間層后又涂覆二氧化錫表面層。有沒有哪位專業(yè)人士能幫忙分析一下,因有些具體數(shù)據(jù)不方便上傳,可單獨(dú)聯(lián)系。萬分感謝!。〖卑! |
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