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[求助]
求助英語達人幫我翻譯翻譯這段話, 對我來說難度較大, 謝謝諸位!!!!
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我們注意到300度退火時，N，O的強度明顯強于制備態(tài)和400退火態(tài)的樣品的強度。我們認為原因as discussed below. As we mentioned above, XPS峰的強度和收集到的光電子數(shù)量有關(guān)，而收集到光電子數(shù)量與光電子的出射深度又密切相關(guān)。 當(dāng)界面改善之后，光電子受到的漫散射作用減弱，光電子近乎可以垂直出射，在3λ的探測深度范圍內(nèi)，使得收集到的光子數(shù)量增加，從而使得XPS的峰強度增加，這可以用來解釋300退火后XPS強度的增強. 而當(dāng)界面粗糙的時候，會造成光電子的漫散射，當(dāng)垂直收集時，在3λ的探測深度范圍內(nèi)，收集到的光電子數(shù)量減少，從而降低了XPS的峰強度,這可以用來解釋400退火后XPS強度的減弱�？傊�，300退火后的NiFe/AlOx界面較制備態(tài)發(fā)生了顯著的改善，而在400度退火后，界面又發(fā)生了明顯的惡化。 跪謝!!!! [ Last edited by 檸檬樹 on 2013-3-8 at 11:52 ] |
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xiao_hu
木蟲 (著名寫手)
Tiny
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【答案】應(yīng)助回帖
phu_grassman: 違規(guī)存檔, please translate by yourself. Thanks 2013-03-14 19:32:07
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When we noticed that 300 degrees of annealing, N, O intensity is much stronger than the preparation of state and 400 annealing state of the strength of the sample. We think the reasons as discussed below. As we mentioned above, XPS peak intensity and collected is related to the number of photoelectron photoelectron photoelectron and quantitative and collected the shot and depth are closely related. When interface after improve, photoelectron is diffuse scattering effect is abate, photoelectron almost can be ejected vertically, within the scope of the 3 lambda probe depth, increase number of photons collected, making XPS peak intensity increases, which can be used to explain the 300 XPS strength enhancement after annealing. And when the interface roughness can cause photoelectron diffuse scattering, when the vertical collection, within the scope of the 3 lambda probe depth, decrease in the number of collected photoelectron, which reduces the XPS peak intensity, which can be used to explain the 400 XPS intensities of after annealing. All in all, 300 after annealing NiFe/AlOx interface is preparation condition improved significantly, and after annealing at 400 degrees, interface and there has been a marked deterioration. 湊活吧 |
4樓2013-03-08 14:41:08
3樓2013-03-08 14:15:50
5樓2013-03-08 15:27:50
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