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sunliuqian銀蟲 (小有名氣)
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[求助]
重開一貼,自我感覺翻譯的較挫,求潤色英文啊,謝謝
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值得注意的是，在300℃退火后樣品的Ni2p和B2p的XPS峰強度顯著強于制備態(tài)和400退火的樣品。通常，XPS峰的強度和探測到的光電子強度，即收集到的光電子數(shù)目有關(guān),而收集到的光電子數(shù)量要受到表面粗糙度的影響。本實驗中，制備態(tài)，300℃和400℃的樣品的XPS實驗是在同樣的條件下測試的，樣品的各層厚度一樣，而且測得的Al2p的XPS峰的強度也基本相同，如圖4。（d）所示。但是300退火后的樣品的Ni2p和B2p的XPS峰強度明顯強于制備態(tài)和400度的，這表明300度退火的樣品的NiB/Al界面質(zhì)量要優(yōu)于制備態(tài)和400的退火的NiB/Al界面。 It is worth noting that, compared with the samples in the as-deposited state and after annealing at 400 °C, the Ni 2p and B 2p XPS intensities for the 300℃ annealed samples show significant increase. Generally, the XPS peak intensity is related to the detected photoelectron intensity, namely the number of photoelectrons collected, which is affected by surface roughness. In this experiment, the XPS studies were performed under the same conditions for the samples in the as-deposited state and after annealing at 300 and 400 °C,with the same thickness of each layer in those samples. And the measured Al2p peak has the same intensity, as Figure 4 (d) shown below, but the Ni 2p and B 2p XPS intensities for the 300℃ annealed samples are much stronger than the samples in the as-grown state and after annealing at 400 °C, which indicates that the NiB/Al interface quality of 300 °C annealed samples is substantially superior to that of the preparation state and 400 annealed ones. [ Last edited by sunliuqian on 2013-3-18 at 11:13 ] |
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crazyvolcano
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【答案】應(yīng)助回帖
| It is worth noting that, the XPS peaks of the Ni 2p and B 2p of the sample annealed at 300 °C are apparently more intense than that of the as-prepared one and the one which is annealed at 400 °C. Generally, the intensity of XPS peaks is related to the intensity of the detected photoelectrons-the number of collected photoelectrons, which is affected by the surface roughness. In this work, the XPS spectra of the as-prepared sample and the samples annealed at 300 °C and 400 °C were characterized under the same conditions. The thickness of each layer in these samples were equal, and the intensity of the Al2p peaks measured from the XPS spectra were alike, as shown in Figure 4 (d). However, the Ni 2p and B 2p XPS peaks of the samples annealed at 300°C are much stronger than that of the as-prepared ones and the ones annealed at 400 °C, which indicates that the properties of the NiB/Al interface of the samples annealed at 300 °C is substantially superior to that of the as-prepared and 400 °C-annealed ones. |
2樓2013-03-18 11:40:41
hookhans
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sunliuqian: 金幣+20, 翻譯EPI+1, ★★★★★最佳答案, 很感謝 2013-03-18 14:32:44
sunliuqian: 金幣+20, 翻譯EPI+1, ★★★★★最佳答案, 很感謝 2013-03-18 14:32:44
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謹供參考： It should mention that the intensities of the Ni2P and B2p XPS peaks of the sample annealed at 300C are much stronger than those of the as-prepared and 400C annealed samples. Usually,the intensities of the XPS peaks are related to the detected photocurrent intensity, namely (i.e.,) the amounts of the collected photoelectrons, which in turn are affacted by the roughness of the surface. In our experiments, the XPS measurments for the as-prepared, 300C and 400C annealed samples were perfomed under the same experimental conditions with the same thicknesses. As shown in Fig 4(d), these three samples show almost all identical Al2p XPS peak intensities. However, the Ni2p and B2p XPS peak intensities are apparently much stronger for the samples annealed at 300C than those of the as-prepared and 400C annealed samples, which strongly suggests that the quality of the NiB/Al interface of the sample annealed at 300C is much better than that of the as-prepared and 400C annealed samples. |
3樓2013-03-18 11:57:27
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