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sunliuqian銀蟲 (小有名氣)
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漢譯英,求潤色,在線等..................................
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1.隨著研究的深入，人們發(fā)現(xiàn)低維納米尺度的體系中自旋自由度在很多方面優(yōu)于電荷，充分利用電子的自旋屬性，有可能獲得功能更強大、操控更方便、處理速度更快的新一代微電子器件。 As research continues, it is found that the spin degrees of freedom in the low-dimensional nano-scale system are superior to charge in many ways. By making full use of the properties of the electron spin, it is possible to obtain new generation of microelectronic devices with more powerful functionality, more convenient manipulation and much faster processing speed. 2.異常AMR是指在鈣鈦礦型錳氧化物中發(fā)現(xiàn)的比傳統(tǒng)AMR大幾個數(shù)量級的各向異性磁電阻效應(yīng)。其機制是晶格結(jié)構(gòu)由立方到斜方的扭曲破壞了對稱性，產(chǎn)生了一個對外場各向異性的磁彈性響應(yīng)和隨之發(fā)生的顯著的磁輸運行為。 Abnormal AMR with several orders of magnitude than the traditional AMR found in the perovskite-type manganese oxides, originates from the broken symmetry, through cubic to orthorhombic distortion in the lattice structure, creating an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior[17]. 3.在理論上，這種由自旋軌道耦合誘導(dǎo)的各向異性磁電阻現(xiàn)象在高溫下實現(xiàn)的可能性并沒有明顯的物理限制。 In theory, the possibility the AMR phenomenon induced by the spin-orbit coupling achieve on high temperature is no limit. 謝謝 4.他們設(shè)計了一種隧穿元件，其只有一個包含IrMn反鐵磁體的磁性電極和一個被MgO勢壘層分開的無磁性的Pt電極。 The designed tunneling element by Park et al.[18] includes only one IrMn antiferromagnetic magnetic electrode and a Pt electrode, separated by a non-magnetic MgO barrier layer. [ Last edited by sunliuqian on 2013-3-19 at 09:23 ] |
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sunliuqian
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2樓2013-03-19 10:39:02
BoaHancock
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【答案】應(yīng)助回帖
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As research continues, it is found that the spin degrees of freedom in the low-dimensional nano-scale system is superior to change in many ways. By making full use of the properties of the electron spin, it is possible to obtain a new generation of microelectronic devices with more robust functionality, more convenient manipulation and much faster processing speed. Abnormal AMR with several orders of magnitude than the traditional AMR found in the perovskite-type manganese oxides, originates from the broken symmetry, through cubic to orthorhombic distortion in the lattice structure, creating an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. In theory, the possibility the AMR phenomenon induced by the spin-orbit coupling achieves at high temperature is not limited. The designed tunneling element by Park et al. includes only one IrMn antiferromagnetic magnetic electrode and a Pt electrode, separated by a non-magnetic MgO barrier layer. |
hookhans
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Farmer
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sunliuqian: 金幣+20, 翻譯EPI+1, ★★★★★最佳答案, 過獎了 哈哈 經(jīng)常來求助, 也會收獲很多的 你的翻譯總能給人驚喜,,,3q 2013-03-19 14:49:46
sunliuqian: 金幣+20, 翻譯EPI+1, ★★★★★最佳答案, 過獎了 哈哈 經(jīng)常來求助, 也會收獲很多的 你的翻譯總能給人驚喜,,,3q 2013-03-19 14:49:46
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其實,LZ的翻譯已經(jīng)夠好的了,只是要更精益求精罷了. 以下是的我的語言,謹(jǐn)供參考: 1.隨著研究的深入，人們發(fā)現(xiàn) 低維納米尺度的體系中 自旋自由度 在很多方面優(yōu)于電荷，充分利用電子的自旋屬性，有可能獲得功能更強大、操控更方便、處理速度更快的新一代微電子器件。 With the development of research, it is found that the spin degrees of freedom in low-dimensional nano-scale systems are superior to the charge in many ways. By taking advantage of the spin properties of electron, it is possible to obtain new generation microelectronic devices with more powerful functionality, more convenient manipulation and much faster processing speed. 2.異常AMR是 指在鈣鈦礦型錳氧化物中發(fā)現(xiàn)的 比傳統(tǒng)AMR大幾個數(shù)量級的 各向異性磁電阻效應(yīng)。其機制 是晶格結(jié)構(gòu)由立方到斜方的扭曲破壞了對稱性，產(chǎn)生了一個對外場 各向異性的磁彈性響應(yīng) 和 隨之發(fā)生的顯著的磁輸運行為。 Abnormal AMR refers to the anisotropic magnetoresistance effect found in perovskite-type manganese oxides, which is several orders of magnitude higher than that of the traditional AMR. The abnormal AMR originates from the broken symmetry caused by the distortion of the crystal (lattice) structure from cubic to orthorhombic, which in turn creates (exerts) an anisotropic magneto-elastic response to the external field and the consequent remarkable magneto-transport behavior[17]. 3.在理論上，這種由自旋軌道耦合誘導(dǎo) 的各向異性磁電阻現(xiàn)象 在高溫下實現(xiàn)的可能性并沒有明顯的物理限制。 In theory, there is no apparent physical limitation on the possibility of realizing the AMR effect induced by the spin-orbit coupling at high temperature. 4.他們設(shè)計了一種隧穿元件，其只有一個包含IrMn反鐵磁體的磁性電極和一個被MgO勢壘層分開的無磁性的Pt電極。 The tunneling element designed by Park et al.[18] contains only one IrMn antiferromagnetic magnetic electrode and a Pt electrode separated by a non-magnetic MgO barrier layer. |
4樓2013-03-19 13:21:46
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