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[求助] 求助幫我潤潤色英語啊

In many of the spin electronic devices, the properties of insulating layers have a determinant effect on device performance. Notably, MgO is an important material and often used for the fabrication of high-quality spintronics devices as well as in basic spintronic research. Initially, Parkin et al. 1), and Yuasa et al.2) reported that magnetic tunnel junctions (MTJs) consisting of ferromagnetic electrodes and an MgO barrier have exhibited significantly high tunneling magnetoresistance (TMR). Since then, it is found that not only in MTJs, but also in all kinds of spin electronics, such as: the metallic lateral spin valves3), abnormal Hall effect4), as well as anisotropic magnetoresistance (AMR) effect5), the use of MgO layers will significantly improve the devices performance.

這段是我的其中一篇文章的引言.
現(xiàn)在正在寫另外的一篇文章,內(nèi)容肯定不一樣,你知道的,一般自己的文章的有些部分的前沿的一部分會(huì)大體相當(dāng),但又不能原封不動(dòng)的照搬,這就是抄襲啦,
所以求助一下諸位,幫我改改, 原意不便, 修改修改.

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1樓 2013-04-16 11:36:00

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hookhans

鐵桿木蟲 (著名寫手)

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【答案】應(yīng)助回帖

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檸檬樹: 金幣+10, 翻譯EPI+1, ★★★★★最佳答案, 矮油,不錯(cuò)幺 2013-04-16 14:49:34

不知道理解的對(duì)不對(duì)，你在進(jìn)一步修改吧。這只是拋磚引玉：

The properties of the insulating layers play an important role in the performance of many spin electronic devices. As an important insulating material for fabricating high-quality spintronic devices, MgO has been widely studied in basic spintronic research. Since the original demonstration by Parkin et al. 1 and Yuasa et al. 2 that the magnetic tunnel junctions (MTJs) composed of a MgO barrier layer on (in) ferromagnetic electrodes exhibits significantly high tunneling magnetoresistance (TMR) (Ref

, MgO layers have been applied in various kinds of spin related electronic devices to improve the performances, such as MTJs, metallic lateral spin valves3), abnormal Hall effect4), and anisotropic magnetoresistance (AMR) effect5).

贊一下

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where-there-is-a-will-there-is-a-way.

2樓2013-04-16 13:23:22