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1.Mitchnell et al. 道了NiFe的磁電阻值和NiFe薄膜的成分和厚度有關(guān),并且給出了塊體和薄膜狀態(tài)下NiFe的MR值隨成分的變化曲線。 2.對于NiFe薄膜來說,Lee et al. 認(rèn)為在厚度一定時,單一的強(111)織構(gòu)一般都對應(yīng)較大的MR值,而隨機取向的薄膜的MR值一般不大。Lee et al. and Sheng et al.等人利用合適的種子層如:Ta和NiFeCr等誘導(dǎo)出很強的NiFe(111)織構(gòu),獲得了顯著提高的磁電阻值。 |
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1.Mitchnell et al. 道了NiFe的磁電阻值和NiFe薄膜的成分和厚度有關(guān),并且給出了塊體和薄膜狀態(tài)下NiFe的MR值隨成分的變化曲線。 Mitchnell et al. reported that the magnetoelectric resistance (MR) of NiFe are related to the composition and thickness of NiFe, and proposed the change of MR according to composition of NiFe block and film, respectively. 2.對于NiFe薄膜來說,Lee et al. 認(rèn)為在厚度一定時,單一的強(111)織構(gòu)一般都對應(yīng)較大的MR值,而隨機取向的薄膜的MR值一般不大。Lee et al. and Sheng et al.等人利用合適的種子層如:Ta和NiFeCr等誘導(dǎo)出很強的NiFe(111)織構(gòu),獲得了顯著提高的磁電阻值。 As far as NiFe film be concerned, Lee et al. held that the strong peak according to (111) facet texture generally corresponds to larger values of MR, while the low value of MR generally accords to the random orientation. Lee et al. and Sheng et al. obtained NiFe with strong (111) facet texture and remarkablely elevated MR value, through suitable seed layer as the induction, such as: Ta and NiFeCr. 能力有限,僅供參考 |
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