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captain唐木蟲 (著名寫手)
論壇痞子
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[求助]
無機的,鎢原子求翻譯
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The chemical composition of the W18O49 nanocrystal synthesized using propanol was examined by X-ray photoelectron spectroscopy (XPS). The full range of XPS spectra of the W18O49 nanocrystal is shown in Figure 4a. Peaks at binding energies corresponding to oxygen and tungsten are clearly observed, and no impurities other than carbon were observed in the spectra. For tungsten, a complex energy distribution of W 4f photoelectrons was obtained, as shown in Figure 4b. The W 4f core-level spectrum could be fitted into three doublets, associated with three different oxidation states of W atoms. The main peaks, having W 4f5/2 at 37.8 eV and W 4f7/2 at 35.7 eV, are attributable to the W atoms being in a 6+ oxidation state. The second doublet, with a lower binding energy at 34.6 and 36.7 eV, resulted from emission of W 4f5/2 and W 4f7/2 core levels from the atoms in an oxidation state of 5+. Furthermore, the third doublet, observed at 33.7 and 335.8 eV, corresponded to the W4+ oxidation state. These three oxidation states are the typical oxidation states found in W18O49 nanomaterials, as reported previously.27,28 The photoelectrons from O 1s display a relatively wide and asymmetric peak, with the highest point at 530.5 eV, which could be assigned to the oxygen bond with W atoms in W18O49 (Figure 4c). The other peak at a higher photoelectron energy of 532.3 eV may be attributed to the residual water and/or C−O bond originating from the residual adsorbed molecules. |
| 用X射線光電子譜(XPS)來檢測由丙醇合成的W18O49納米晶體的化學(xué)組成。圖4a顯示了W18O49納米晶體的全部范圍的XPS光譜。與氧和鎢相關(guān)的結(jié)合能峰能夠清晰地被觀察到,在譜圖中觀察不到除了碳以外的雜質(zhì)。對于鎢,如圖4b所示,可以得到一個復(fù)雜的W 4f光電子能量分布。這個W 4f芯態(tài)能譜對應(yīng)三個雙峰,這與W原子三種不同氧化態(tài)有關(guān)。主峰對應(yīng)位于37.8eV的W 4f5/2和35.7eV的W 4f7/2,這是由于W原子存在6+的氧化態(tài)。位于34.6和36.7eV處結(jié)合能較低的第二個雙峰,是由于5+的氧化態(tài)原子W 4f5/2和W 4f7/2的芯態(tài)發(fā)射所致。此外,在33.7和335.8eV處觀察到的第三個雙峰,對應(yīng)W4+的氧化態(tài)。這三個氧化態(tài)是W18O49納米材料的典型氧化態(tài)。在先前報道中27、28,O 1s光電子顯示出一個最高點位于530.5eV處,相對較寬,不對稱的峰,可以用來標(biāo)記W18O49中與W原子相連的氧鍵(圖4c)。另一個位于532.3eV的更高的光電子能峰可能歸因于殘留水的存在或是來自殘留的吸附分子的C−O鍵的存在,或者兩種原因兼而有之。 |
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