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| Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0001) substrates by magnetron sputtering |
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IDS 號(hào): 877FI ISSN: 0169-4332 http://apps.webofknowledge.com/f ... age=1&doc=3 |
3樓2013-09-03 11:09:36
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Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0 0 0 1) substrates by magnetron sputtering 入藏號(hào): WOS:000299162300043 文獻(xiàn)類型: Article 語(yǔ)種: English 出版商: ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS Web of Science 類別: Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter 研究方向: Chemistry; Materials Science; Physics IDS 號(hào): 877FI ISSN: 0169-4332 |
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Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0001) substrates by magnetron sputtering 作者: Lin Cui; Hua-Yu Zhang; Gui-Gen Wang; Fang-Xu Yang; Xu-Ping Kuang; Rui Sun; Jie-Cai Han 來(lái)源出版物: Applied Surface Science 卷: 258 期: 7 頁(yè): 2479-85 出版年: 15 Jan. 2012 DOI: 10.1016/j.apsusc.2011.10.076 摘要: ZnO thin films were epitaxially grown on sapphire (0001) substrates by radio frequency magnetron sputtering. ZnO thin films were then annealed at different temperatures in air and in various atmospheres at 800degC, respectively. The effect of the annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films are investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL). A strong (002) diffraction peak of all ZnO thin films shows a polycrystalline hexagonal wurtzite structure and high preferential c-axis orientation. XRD and AFM results reveal that the better structural quality, relatively smaller tensile stress, smooth, uniform of ZnO thin films were obtained when annealed at 800degC in N 2. Room temperature PL spectrum can be divided into the UV emission and the Visible broad band emission. The UV emission can be attributed to the near band edge emission (NBE) and the Visible broad band emission can be ascribed to the deep level emissions (DLE). By analyzing our experimental results, we recommend that the deep-level emission correspond to oxygen vacancy (V O) and interstitial oxygen (O i). The biggest ratio of the PL intensity of UV emission to that of visible emission (INBE/IDLE) is observed from ZnO thin films annealed at 800degC in N 2. Therefore, we suggest that annealing temperature of 800degC and annealing atmosphere of N 2 are the most suitable annealing conditions for obtaining high quality ZnO thin films with good luminescence performance. [All rights reserved Elsevier]. 入藏號(hào): 12869464 文獻(xiàn)類型: Journal Paper 語(yǔ)種: English 處理類型: Experimental 受控索引: annealing; atomic force microscopy; deep levels; II-VI semiconductors; interstitials; photoluminescence; semiconductor epitaxial layers; sputter deposition; tensile strength; texture; vacancies (crystal); wide band gap semiconductors; X-ray diffraction; zinc compounds 非受控索引: annealing; optical properties; structural properties; thin films; sapphire (0001) substrates; epitaxial growth; radio frequency magnetron sputtering; X-ray diffraction; XRD; atomic force microscopy; AFM; photoluminescence; polycrystalline hexagonal wurtzite structure; preferential c-axis orientation; tensile stress; near band edge emission; visible broad band emission; deep level emissions; oxygen vacancy; interstitial oxygen; temperature 800 degC; temperature 293 K to 298 K; ZnO; Al 2O 3 分類代碼: A6170A Annealing processes; A6170B Interstitials and vacancies; A6820 Solid surface structure; A6855 Thin film growth, structure, and epitaxy; A7155G Impurity and defect levels in II-VI and III-V semiconductors; A7855E Photoluminescence in II-VI and III-V semiconductors; A7865K Optical properties of II-VI and III-V semiconductors (thin films/low-dimensional structures); A8115C Deposition by sputtering; B2550A Annealing processes in semiconductor technology; B4220 Luminescent materials; B0520B Sputter deposition; B2520D II-VI and III-V semiconductors 數(shù)值數(shù)據(jù)索引: temperature 1.07315E+03 K; temperature 2.93E+02 to 2.98E+02 K 化學(xué)物質(zhì)索引: ZnO/bin Zn/bin O/bin; Al2O3/sur Al2/sur O3/sur Al/sur O/sur Al2O3/bin Al2/bin O3/bin Al/bin O/bin 國(guó)際專利分類: C09K11/00 Luminescent, e.g. electroluminescent, chemiluminescent, materials; C21D1/26 Methods of annealing; C23C14/34 Sputtering; H01L21/02 Manufacture or treatment of semiconductor devices or of parts thereof; H01L21/70 Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof 作者地址: Lin Cui; Hua-Yu Zhang; Gui-Gen Wang; Fang-Xu Yang; Xu-Ping Kuang; Rui Sun; Jie-Cai Han; Shenzhen Grad. Sch., Harbin Inst. of Technol., Shenzhen, China. 出版商: Elsevier Science B.V., Netherlands 研究方向: Crystallography; Physics; Spectroscopy; Materials Science; Engineering; Optics (由 Thomson Reuters 提供) 參考文獻(xiàn)數(shù): 38 CODEN: ASUSEE ISSN: 0169-4332 文獻(xiàn)號(hào): S0169-4332(11)01645-X |
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