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[求助]
把這句話翻譯成比較好的中文啊,要意譯
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1。We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. 2。pay special attention to distinguishing tunneling AMR and anisotropic tunneling magnetoresistance. The explored structure above has two ferromagnetic layers, where the spin injection may occur, and therefore it should belong to the latter [ Last edited by 檸檬樹 on 2013-9-8 at 11:12 ] |
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2;區(qū)分ATMR和TAMR anisotropic tunneling magnetoresistance:ATMR tunneling anisotropic magnetoresistance:TAMR 論文地址:https://www.researchgate.net/pub ... ic_tunnel_junctions 或者見附件(附件傳不上,還是看上面的地址吧,也是全文的) 隧道效應(yīng):量子力學(xué)中粒子穿過似乎無法穿透的屏障且用非量子物理學(xué)無法解釋原因 隧道各向異性磁電阻效應(yīng) FR: https://www.mse.tsinghua.edu.cn/ ... 5007440827917_.html AMR 異向磁阻(Anisotropic magnetoresistance, AMR) ;有些材料中磁阻的變化,與磁場(chǎng)和電流間夾角有關(guān),稱為異向性磁阻效應(yīng)。此原因是與材料中s軌域電子與d軌域電子散射的各向異性有關(guān)。 穿隧磁阻效應(yīng)(Tunnel Magnetoresistance, TMR) ;穿隧磁阻效應(yīng)是指在鐵磁-絕緣體薄膜(約1納米)-鐵磁材料中,其穿隧電阻大小隨兩邊鐵磁材料相對(duì)方向變化的效應(yīng)。 https://en.wikipedia.org/wiki/Ma ... esistance_.28AMR.29 https://baike.baidu.com/view/7972.htm#6 2,Tunnel injection 隧道注入 ;Tunnel injection is a field electron emission effect(場(chǎng)致電子發(fā)射); specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator. It is used to program NAND flash memory. The process used for erasing is called tunnel release. An alternative to tunnel injection is the spin injection. See also: Hot carrier injection ;https://en.wikipedia.org/wiki/Tunnel_injection ;https://dict.cnki.net/...hot_eng/h_50023063000.html ; Some important methods of spininjection like Ohmic injection, tunnel injection, and ballistic injection and their latest developmentare reviewed. 有效的自旋注入是自旋電子學(xué)面臨的重大挑戰(zhàn)之一,文中綜述了歐姆式注入、隧道注入、彈道電子注入等幾種重要的自旋注入方法以及它們的最新進(jìn)展。 ;https://dict.cnki.net/h_53583636000.html ;;;寫入數(shù)據(jù)有兩種技術(shù),熱電子注入(hot electron injection)和F-N隧道效應(yīng)(Fowler Nordheim tunneling=),前一種是通過源極給浮柵充電,后一種是通過硅基層給浮柵充電。 ;【為什么NOR型閃存的壽命較短? 】正是由于在寫入和擦除時(shí)利用了不同的技術(shù),使得NOR芯片在寫入和擦除數(shù)據(jù)時(shí),電流會(huì)從不同的地方經(jīng)過,如此一來,加劇了介質(zhì)的氧化降解,加速了芯片的老化 https://bbs.ednchina.com/BLOG_ARTICLE_5678.HTM |
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