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[求助]
求助一段漢譯英修改/潤色
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原因在于少子壽命的衰減先后經(jīng)歷快和慢兩個不同的衰減階段，分別是由于fast-forming center和 the slowly forming center of B–O defect的形成，前者所需的激活能為0.23eV，這個過程在幾分鐘以內(nèi)就完成；后者需要的激活能更大一些，為0.47 eV，通常需要持續(xù)好幾個小時。此外，光照后少子壽命的穩(wěn)定值只由后者決定。 The reason is that the minority carrier lifetime degradation consists of a fast initial process and a slow asymptotic process: the initial fast degradation is due to the formation of the fast-forming center of B–O defect with the thermal-activation energy is about 0.23 eV, reaching completion on a time scale of several minutes, while the slow asymptotic degradation is due to the formation of the slowly forming center of B–O defect with the thermal-activation energy is about 0.47 eV, lasting several hours; Furthermore, the stable lifetime after illumination is shown to be limited by the slowly forming center alone. |
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befair
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hanches: 金幣+3, 每次應助都這么給力，十分感謝~BB獎勵~ 2013-11-08 20:59:51
ynkmrxp: 金幣+30, ★★★很有幫助 2013-11-09 12:52:22
感謝參與，應助指數(shù) +1
hanches: 金幣+3, 每次應助都這么給力，十分感謝~BB獎勵~ 2013-11-08 20:59:51
ynkmrxp: 金幣+30, ★★★很有幫助 2013-11-09 12:52:22
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The reason why decay of the minority carrier lifetime undergoes an initial fast and subsequent slow phase is due to formation of the fast-forming center of B–O defect for the former and the slow-forming one for the latter, respectively. The thermal-activation energy required for the former is about 0.23 eV and the process is completed in minutes, while the latter requires a higher thermal-activation energy at about 0.47 eV and will mostly last in hours. Furthermore, the steady-state value of minority carrier lifetime after illumination is shown to be dependent only on the latter phase. 注： 1.壽命衰減一般用decay 2.原譯文用了asymptotic來描述慢衰減，但貌似原文沒有這個意思，還請樓主斟酌，因為asymptotic有其特定的數(shù)學含義。最后一句的steady-state和此有關(guān)，不妥的話請樓主忽略 3. 我用了former/latter 等來簡化說明，不然有點繁瑣 供參考，不妥見諒 |
2樓2013-11-08 17:52:55
雨人007
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感謝參與，應助指數(shù) +1
ynkmrxp: 金幣+20, ★★★很有幫助 2013-11-09 12:52:28
感謝參與，應助指數(shù) +1
ynkmrxp: 金幣+20, ★★★很有幫助 2013-11-09 12:52:28
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The minority carrier lifetime decay has experienced fast and slow decay phase which consist of fast-forming center and the slowly forming center of B-O defect ，the former activation energy is 0.23eV and the process accomplish in minutes,the latter requires activation energy is larger, as 0.47 eV,lasting several hours. In addition, the stabe value of the minority carrier lifetime after illumination is only determined by the latter. 盡量避免四六級的思維去翻譯吧，一番努力，希望你能肯定！ |
3樓2013-11-09 11:44:28
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