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單子楓木蟲 (初入文壇)
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[求助]
中譯英
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形核是金剛石薄膜生長過程中必不可少的過程，形核密度的大小隨著甲烷濃度的高低而發(fā)生變化，甲烷濃度越高，形核密度越高。甲烷濃度高，等離子體激發(fā)的碳源濃度越高，在基片表面的形核驅(qū)動(dòng)力就越大。 在生長薄膜之前，選用不同的參數(shù)進(jìn)行形核，在整個(gè)形核過程中，保持各自的H2和CH4濃度比不變，其中一組的濃度比為200:4，另外一組的濃度比為200:6，兩個(gè)樣品所不同的是通入反應(yīng)中的CH4流量的大小。在20min后，形核過程結(jié)束，改變CH4濃度進(jìn)行生長，并在生長過程中，在兩組樣品中都加入一定量的O2。 上圖是形核時(shí)間20min的兩個(gè)樣品進(jìn)行SEM表征圖，由圖中可以看到，兩個(gè)樣品的形核密度有所不同，圖4b中的形核密度比圖4a中的形核密度要高，這是因?yàn)閳Db中的樣品在進(jìn)行預(yù)處理的時(shí)候，采用的納米級(jí)金剛石微粉進(jìn)行研磨，使Si片表面有明顯的劃痕溝道，增加了C原子在Si表面的附著力，當(dāng)氣體進(jìn)一步被激發(fā)之后，激發(fā)的C原子進(jìn)一步堆積在溝道處，所生成的金剛石顆粒進(jìn)一步增大，使得所生成的金剛石顆粒可以清晰的從SEM圖中觀察出來。從圖4a中可以看到，在基底Si的表面有明顯的劃痕，并且沉積出的金剛石顆粒填充在劃痕溝道中，從SEM圖中可以觀察到，基片表面還有部分地方不能看到清晰的金剛石顆粒，可能原因是這些區(qū)域的Si表面過于光滑，C原子不能有效的附著在其表面，另一個(gè)可能是由于所產(chǎn)生的C濃度相對(duì)較低，所生長出的顆粒較小，在當(dāng)前的放大倍數(shù)下不能觀察到。在基片的中心位子，可以看到部分顆粒已經(jīng)連接成薄膜了，在后續(xù)生長的過程中，這部分的薄膜將優(yōu)先生長，這可能導(dǎo)致這部分區(qū)域生長速率快于其它區(qū)域。 |
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deng神之刺客
木蟲 (小有名氣)
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【答案】應(yīng)助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ...
RXMCDM: 金幣+1, 多謝應(yīng)助！ 2014-01-15 10:16:41
單子楓(RXMCDM代發(fā)): 金幣+30, 最佳答案！ 2014-01-26 15:53:05
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:53:16
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:53:22
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:53:29
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:53:35
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:53:41
單子楓(RXMCDM代發(fā)): 金幣+20 2014-01-26 15:53:47
RXMCDM: 翻譯EPI+1 2014-01-26 18:43:20
RXMCDM: 金幣+1, 多謝應(yīng)助！ 2014-01-15 10:16:41
單子楓(RXMCDM代發(fā)): 金幣+30, 最佳答案！ 2014-01-26 15:53:05
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:53:16
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:53:22
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:53:29
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:53:35
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:53:41
單子楓(RXMCDM代發(fā)): 金幣+20 2014-01-26 15:53:47
RXMCDM: 翻譯EPI+1 2014-01-26 18:43:20
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Nucleation is an indispensable procedure in the process of diamond film growth, the size of the nucleation density along with the change of methane concentration. The higher the methane concentration , the higher the nucleation density. With the high concentration of methane, the higher the concentration of carbon excitated by plasma, the greater the nucleation driving force on the surface of the substrate. Before the growth of film, different parameters of nucleation was chosen, in the whole process of the nucleation, maintained their respective H2 and CH4 concentration ratio unchanged, the concentration ratio of one group was 200:4, another group was 200:6, the difference of two samples was that the size of the CH4 flow rate was different in the reaction. 20 min after the end of the nucleation process, change the concentration of CH4 in growth, and the two samples were added in a certain amount of O2 in the process of growth. The figure above was when the nucleation time was 20 min, the two samples were analyzed by SEM FIG. It could be seen in the figure that the nucleation density of two samples were different. In figure 4b nucleation density was higher than that in figure 4a, this was because in the pretreatment of the sample in figure b, adoptive of nanoscale diamond fine powder was grinded, so obvious scratch channel was generated on the Si substrate surface, increased the adhesion of C atoms in the Si surface. When the gas was further excited, C atoms excited in the channel of the further stacked, the generated diamond particles increased further, so that the diamond particles were generated could be clearly observed from the SEM figure. As could be seen in Figure 4a , there was a noticeable scratches on the surface of the Si substrate, and the deposition of diamond particles filled in the channel scratches. It could be observed from the SEM images, diamond particles could not be seen clearly on some parts of the substrate surface, possible reason was that these areas of the surface of the Si was so smooth that C atoms could not be attached to the surface effectively; another reason might be that the C concentration was relatively low, the growth of particles was small, and it could not be observed under the current magnification. In the center seat of the substrate, it could be seen part of the particles had been connected into film. This part of the film would given priority to grow in the subsequent growth in the process, which might lead to this part of the regional growth rate faster than the other. 供參考 |
3樓2014-01-12 19:52:11
luo27xiao
至尊木蟲 (著名寫手)
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【答案】應(yīng)助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ...
RXMCDM: 金幣+1, 多謝應(yīng)助！ 2014-01-15 10:16:29
單子楓(RXMCDM代發(fā)): 金幣+30, 多謝應(yīng)助！ 2014-01-26 15:54:25
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:54:31
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:54:38
RXMCDM: 金幣+1, 多謝應(yīng)助！ 2014-01-15 10:16:29
單子楓(RXMCDM代發(fā)): 金幣+30, 多謝應(yīng)助！ 2014-01-26 15:54:25
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:54:31
單子楓(RXMCDM代發(fā)): 金幣+30 2014-01-26 15:54:38
|
Nucleation of diamond film growth process is essential to the process, the size of the nucleation density with low methane concentrations and changes, the higher the methane concentration, the higher the nucleation density. High methane concentration, the higher the concentration of carbon plasma excitation, the driving force in the nucleation substrate surface becomes. Before film growth, the use of different parameters of nucleation in the nucleation process, H2 and CH4 to maintain their constant concentration ratio, wherein a concentration ratio of 200:4, and the other group concentration ratio of 200 : 6, two samples of different size are introduced into the reaction of CH4 flow. 20min after the nucleation process ends, the CH4 concentration changes were grown in the growth process, the two samples are added in an amount of O2. The figure is the nucleation time of the two samples were analyzed by SEM FIG 20min, can be seen from the figure, the nucleation density of two samples different in Figure 4b than the nucleation density of the nucleation density to Figure 4a high, because the sample in b during preprocessing when using nano-diamond powder grinding, the Si substrate surface scratches channel significantly increases the adhesion of C atoms in the Si surface, when Further, after the gas is excited, the C atoms excited in the channel of the further accumulation, the resulting diamond particles is further increased, so that the diamond particles are generated can be clearly observed from the SEM figure. As can be seen in Figure 4a, the surface of the Si substrate has a noticeable scratches, and the deposition of diamond particles filling the channel in the scratches, it can be observed from the SEM images, there are some parts of the substrate surface can not be seen clear diamond particles, probably because the surfaces of the Si region is too smooth, C atoms which can not be effectively attached to the surface, and the other may be generated by the C content is relatively low due to the smaller particles grow born in the current the magnification can not be observed. In the center seat of the substrate, can see some of the particles into a film has been connected, the subsequent growth process, the film which will be part of the preferential growth, which may result in faster growth rate of this part of the region to other regions |
2樓2014-01-11 18:27:22
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