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cl6860

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2013年機電一體化與信息技術(shù)（ICMIT 2013）桂林 Design and thermal analysis of SiGe HBT with segmented emitter fingers and non-uniform emitter finger spacing

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Accession number:
20140117159677
Title: Design and thermal analysis of SiGe HBT with segmented emitter fingers and non-uniform emitter finger spacing
Authors:    Chen, Liang1 Email author 30750574@163.com; Hu, Cheng Zhong1; Jiang, Chun Ling1
Author affiliation: 1 College of Physics and Electronic Engineering, TaiShan University, TaiAn, China
Source title: Applied Mechanics and Materials
Abbreviated source title: Appl. Mech. Mater.
Volume: 462-463
Monograph title: Progress in Mechatronics and Information Technology
Issue date: 2014
Publication year: 2014
Pages: 592-596
Language: English
ISSN:    16609336
E-ISSN:    16627482
ISBN-13:    9783037859414
Document type: Conference article (CA)
Conference name: 2013 International Conference on Mechatronics and Information Technology, ICMIT 2013
Conference date: October 19, 2013 - October 20, 2013
Conference location: Guilin, China
Conference code:    101728
Sponsor: Korea Maritime University; Inha University; Hong Kong Industrial Technology Research Centre
Publisher: Trans Tech Publications Ltd, Kreuzstrasse 10, Zurich-Durnten, CH-8635, Switzerland
Abstract: A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and non-uniform emitter finger spacing was proposed to improve the thermal stability. Thermal simulation for a five-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure, the maximum junction temperature of novel structure reduce significantly from 429.025K to 414.252K, the thermal resistance reduce from 159K/W to 141K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced. © (2014) Trans Tech Publications, Switzerland.
Number of references: 13
Main heading:    Heterojunction bipolar transistors
Controlled terms:    Heat resistance  -  Information technology  -  Temperature distribution  -  Thermoanalysis  -  Thermodynamic stability
Uncontrolled terms:    ANSYS software  -  Emitter fingers  -  Emitter structures  -  Junction temperatures  -  Non-uniform  -  Novel structures  -  SiGe heterojunction bipolar transistor  -  Thermal simulations
Classification code:    641.1 Thermodynamics -  714.2 Semiconductor Devices and Integrated Circuits -  801 Chemistry -  903 Information Science -  931.2 Physical Properties of Gases, Liquids and Solids
DOI: 10.4028/www.scientific.net/AMM.462-463.592
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.

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