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第 1 條，共 7 條 標題: Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN 作者: Yin, CM (Yin, Chunming); Yuan, HT (Yuan, Hongtao); Wang, XQ (Wang, Xinqiang); Liu, ST (Liu, Shitao); Zhang, S (Zhang, Shan); Tang, N (Tang, Ning); Xu, FJ (Xu, Fujun); Chen, ZY (Chen, Zhuoyu); Shimotani, H (Shimotani, Hidekazu); Iwasa, Y (Iwasa, Yoshihiro); Chen, YH (Chen, Yonghai); Ge, WK (Ge, Weikun); Shen, B (Shen, Bo) 來源出版物: NANO LETTERS 卷: 13 期: 5 頁: 2024-2029 DOI: 10.1021/nl400153p 出版年: MAY 2013 摘要: Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices. 入藏號: WOS:000318892400024 作者識別號: 作者 ResearcherID 號 ORCID 號 Wang, Xinqiang B-8798-2013 Iwasa, Yoshihiro C-1719-2009 Yuan, Hongtao C-9807-2012 Yin, Chunming F-5763-2011 0000-0003-0117-8225 ISSN: 1530-6984 第 2 條，共 7 條 標題: Temperature sensitive photoconductivity observed in InN layers 作者: Guo, L (Guo, Lei); Wang, XQ (Wang, Xinqiang); Feng, L (Feng, Li); Zheng, XT (Zheng, Xiantong); Chen, G (Chen, Guang); Yang, XL (Yang, Xuelin); Xu, FJ (Xu, Fujun); Tang, N (Tang, Ning); Lu, LW (Lu, Liwu); Ge, WK (Ge, Weikun); Shen, B (Shen, Bo) 來源出版物: APPLIED PHYSICS LETTERS 卷: 102 期: 7 文獻號: 072103 DOI: 10.1063/1.4793190 出版年: FEB 18 2013 摘要: Photoconductivity has been systematically studied in unintentionally doped n-type InN film with super-bandgap excitation (1.53 eV) at temperatures varying in the range of 100-300K. A negative photoconductivity is observed at room temperature, whereas it gradually changes to be positive with decreasing temperature. Transition temperature from negative to positive photoconductivity is found to be greatly related to the residual electron concentration as the higher the electron concentration, the lower the transition temperature. An energy band model including a donor state with large lattice relaxation as well as a recombination center is proposed, which explains the experimental observation well. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793190] 入藏號: WOS:000315596700029 作者識別號: 作者 ResearcherID 號 ORCID 號 Wang, Xinqiang B-8798-2013 ISSN: 0003-6951 第 3 條，共 7 條 標題: Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films 作者: Zhang, YW (Zhang, Yuewei); Wang, XQ (Wang, Xinqiang); Zheng, XT (Zheng, Xiantong); Chen, G (Chen, Guang); Ma, DY (Ma, Dingyu); Xu, FJ (Xu, Fujun); Tang, N (Tang, Ning); Ge, WK (Ge, Weikun); Shen, B (Shen, Bo) 來源出版物: APPLIED PHYSICS EXPRESS 卷: 6 期: 2 文獻號: 021001 DOI: 10.7567/APEX.6.021001 出版年: FEB 2013 摘要: Transport properties of InN layers with both lattice polarities are reported. It is proposed that grain boundaries form potential barriers for electrons and thus lead to a reduction of electron mobility. However, these grain boundaries are important scattering centers only in the N-polarity InN films, but not in the In-polarity ones, which is consistent with the grain feature of the N-polarity InN surfaces. The carrier mobility in grain boundaries is estimated to be about 75 cm(2) V-1 s(-1) at room temperature for our sample, far less than the carrier mobility in the grains. (C) 2013 The Japan Society of Applied Physics 入藏號: WOS:000314748200001 作者識別號: 作者 ResearcherID 號 ORCID 號 Wang, Xinqiang B-8798-2013 ISSN: 1882-0778 第 4 條，共 7 條 標題: Fe-doped InN layers grown by molecular beam epitaxy 作者: Wang, XQ (Wang, Xinqiang); Liu, ST (Liu, Shitao); Ma, DY (Ma, Dingyu); Zheng, XT (Zheng, Xiantong); Chen, G (Chen, Guang); Xu, FJ (Xu, Fujun); Tang, N (Tang, Ning); Shen, B (Shen, Bo); Zhang, P (Zhang, Peng); Cao, XZ (Cao, Xingzhong); Wang, BY (Wang, Baoyi); Huang, S (Huang, Sen); Chen, KJ (Chen, Kevin J.); Zhou, SQ (Zhou, Shengqiang); Yoshikawa, A (Yoshikawa, Akihiko) 來源出版物: APPLIED PHYSICS LETTERS 卷: 101 期: 17 文獻號: 171905 DOI: 10.1063/1.4764013 出版年: OCT 22 2012 摘要: Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by doped Fe-concentration ([Fe]). Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764013] 入藏號: WOS:000310726200028 作者識別號: 作者 ResearcherID 號 ORCID 號 Wang, Xinqiang B-8798-2013 Zhou, Shengqiang C-1497-2009 0000-0002-4885-799X ISSN: 0003-6951 第 5 條，共 7 條 標題: High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy 作者: Wang, XQ (Wang, Xinqiang); Liu, ST (Liu, Shitao); Ma, N (Ma, Nan); Feng, L (Feng, Li); Chen, G (Chen, Guang); Xu, FJ (Xu, Fujun); Tang, N (Tang, Ning); Huang, S (Huang, Sen); Chen, KJ (Chen, Kevin J.); Zhou, SQ (Zhou, Shengqiang); Shen, B (Shen, Bo) 來源出版物: APPLIED PHYSICS EXPRESS 卷: 5 期: 1 文獻號: 015502 DOI: 10.1143/APEX.5.015502 出版年: JAN 2012 摘要: A boundary-temperature-controlled epitaxy, where the growth temperature of InN is controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire substrates by molecular beam epitaxy. The Hall-effect measurement shows a recorded electron mobility of 3280 cm(2) V-1 s(-1) and a residual electron concentration of 1.47 x 10(17) cm(-3) at room temperature. The enhanced electron mobility and reduced residual electron concentration are mainly due to the reduction of threading dislocation density. The obtained Hall mobilities are in good agreement with the theoretical modelling by the ensemble Monte Carlo simulation. (C) 2012 The Japan Society of Applied Physics 入藏號: WOS:000299312400028 作者識別號: 作者 ResearcherID 號 ORCID 號 Zhou, Shengqiang C-1497-2009 0000-0002-4885-799X Wang, Xinqiang B-8798-2013 ISSN: 1882-0778 第 6 條，共 7 條 標題: Dependence of Mg acceptor levels in InN on doping density and temperature 作者: Fujiwara, M (Fujiwara, Masayuki); Ishitani, Y (Ishitani, Yoshihiro); Wang, XQ (Wang, Xinqiang); Kusakabe, K (Kusakabe, Kazuhide); Yoshikawa, A (Yoshikawa, Akihiko) 來源出版物: JOURNAL OF APPLIED PHYSICS 卷: 110 期: 9 文獻號: 093505 DOI: 10.1063/1.3656990 出版年: NOV 1 2011 摘要: Infrared (IR) reflectance and transmission spectra of Mg doped InN films are analyzed using a dielectric function consisting of the terms of phonon, plasmon, and electronic transition between the valence band and the acceptor levels. The reflectance spectra at lower temperatures than 200K are highly affected by the electronic transition. Acceptor activation energy E(a) decreases with the increase in ionized acceptors because of the Coulomb potential overlap of acceptors charged by the background electrons and/or hole generation by the temperature increase. It is found that E(a) is 69(+/- 5) meV at low Mg(-) density limit and decreases to 50 meV at 5K because of the charging by the background electrons of the density of 1 x 10(18) cm(-3). Temperature increase causes the further decrease in E(a), which causes the high hole density of the order of 10(18) cm(-3) at room temperature in spite of the high degeneracy of the acceptor states. The heavy hole mass is obtained as 0.59(+/- 0.06)m(0). (C) 2011 American Institute of Physics. [doi:10.1063/1.3656990] 入藏號: WOS:000297062100021 作者識別號: 作者 ResearcherID 號 ORCID 號 Wang, Xinqiang B-8798-2013 ISSN: 0021-8979 第 7 條，共 7 條 標題: Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy 作者: Yoshikawa, A (Yoshikawa, Akihiko); Wang, XQ (Wang, Xinqiang); Ishitani, Y (Ishitani, Yoshihiro); Uedono, A (Uedono, Akira) 來源出版物: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 卷: 207 期: 5 頁: 1011-1023 DOI: 10.1002/pssa.200983118 出版年: MAY 2010 摘要: InN is still the least studied material among III-nitrides and there are several problems to be overcome for better understanding of its material properties and also its material control for device application. In particular, successful p-type doping is a quite important issue but quite difficult in InN. In this article, we present a study on the latest advances in material control paying special attention to the p-type doping of InN films using Mg-acceptors by MBE, the demonstration of successful p-type control and p-type conduction, and their electrical and optical properties as well. Furthermore, as a prerequisite of successful p-type doping of InN, epitaxy behaviors of InN on GaN and effects of threading dislocations on high-purity undoped InN epilayers grown on GaN template are also discussed. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 入藏號: WOS:000278610700002 會議名稱: Fall Meeting of the European-Materials-Research-Society 會議日期: SEP 14-18, 2009 會議地點: Warsaw, POLAND 會議贊助商 : European Mat Res Soc 作者識別號: 作者 ResearcherID 號 ORCID 號 Wang, Xinqiang B-8798-2013 ISSN: 1862-6300 |
4樓2014-06-10 17:13:33
5樓2014-06-12 03:14:30
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6樓2014-06-12 06:47:58
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