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Small最新綜述:金屬氧化物半導(dǎo)體在染料敏化與量子點太陽能電池中的應(yīng)用
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本綜述全面介紹了二氧化鈦光電陽極染料敏化與量子點太陽能電池,金屬氧化物替代二氧化鈦染料敏化與量子點太陽能電池,其復(fù)合體系染料敏化與量子點太陽能電池 ,鈣鈦礦太陽能電池等,對染料敏化與量子點太陽能電池的研究添磚加瓦。 Metal Oxide Semiconductors for Dye- and Quantum-Dot-Sensitized Solar Cells 共31頁 引文180篇 Isabella Concina* and Alberto Vomiero* Dr. I. Concina, Dr. A. Vomiero CNR-INO SENSOR Lab Via Branze 45, 25123 Brescia , Italy E-mail: isabella.concina@unibs.it; alberto.vomiero@ltu.se Dr. I. Concina University of Brescia Via Valotti 9, 25133 , Brescia , Italy Dr. A. Vomiero Luleå University of Technology 97198 , Luleå , Sweden This Review provides a brief summary of the most recent research developments in the synthesis and application of nanostructured metal oxide semiconductors for dye sensitized and quantum dot sensitized solar cells. In these devices, the wide bandgap semiconducting oxide acts as the photoanode, which provides the scaffold for light harvesters (either dye molecules or quantum dots) and electron collection. For this reason, proper tailoring of the optical and electronic properties of the photoanode can signifi cantly boost the functionalities of the operating device. Optimization of the functional properties relies with modulation of the shape and structure of the photoanode, as well as on application of different materials (TiO2, ZnO, SnO2) and/or composite systems, which allow fi ne tuning of electronic band structure. This aspect is critical because it determines exciton and charge dynamics in the photoelectrochemical system and is strictly connected to the photoconversion effi ciency of the solar cell. The different strategies for increasing light harvesting and charge collection, inhibiting charge losses due to recombination phenomena, are reviewed thoroughly, highlighting the benefi ts of proper photoanode preparation, and its crucial role in the development of high effi ciency dye sensitized and quantum dot sensitized solar cells. |
reviews paper | 納米材料+光電子學(xué) | 光電材料 | QDSC |
solar cells | 文獻zy |
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