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huoxiaodi

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[求助] 請求幫我潤色一下我翻譯的英文，不要求非得直譯。

漢語：
為了改善過孔的干法刻蝕中刻蝕率的不同導(dǎo)致SD線和P-Si接觸面積不一致的問題，同時解決ELA工藝導(dǎo)致P-Si表面突起而造成SD與P-Si點狀接觸的問題，探究了過孔的不同干法刻蝕工藝對TFT-LCD性能的影響，從中找出最佳的過孔干法刻蝕工藝。利用京東方產(chǎn)線設(shè)備制備了兩種不同的LTPS陣列樣品，樣品一的過孔工藝采用傳統(tǒng)的底部接觸方式，樣品二采用新的側(cè)面接觸方式,樣品一和樣品二其余的工藝過程一致。實驗結(jié)果表明：多點的U-I曲線由發(fā)散變?yōu)榧�，電子遷移率有所提高；SEM數(shù)據(jù)表明采用側(cè)面接觸方式能夠完全將P-Si刻穿。結(jié)論：采用側(cè)面接觸方式能夠明顯的解決干法刻蝕中刻蝕率的不同導(dǎo)致SD線和P-Si接觸面積不一致的問題，同時避免了ELA工藝導(dǎo)致P-Si表面突起而造成SD與P-Si點狀接觸的問題，電學(xué)性能有所改善，同時減少了工藝時間，提高了產(chǎn)能。
我翻譯的英文：
In order to improve the difference of contact hole dry etching rate lead to SD line and P-Si contact area inconsistent problem, at the same time solve the SD and P-Si point contact problem caused by the ELA process leading to protrusion of P-Si surface, exploring the effect for the performance of TFT-LCD by the via different dry etching process could find the best via dry etching process. Two different samples of LTPS array was prepared by using BOE production line equipment, the contact hole process of sample 1 using the process traditional way (Just Contact Method), sample 2 using the new way (Side Contact Method). The rest of sample 1 and sample 2 process is same. The experimental results show that the many points U-I curve change from divergence to gather, electron mobility increase. SEM data show that the P-Si can be cut through completely by Side Contact Method. Conclusion: Side Contact Method is able to solve SD line and P-Si contact area inconsistent problem due to difference of contact hole etching rate, at the same time avoid the SD and P-Si point contact problem caused by the ELA process leading to P-Si surface protrusion. The TFT-LCD electrical performance is improved. And the Side Contact Method can reduce the process time, improve the capacity.
求大神潤色以下我的英文翻譯。

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1樓 2015-06-29 00:53:44

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huoxiaodi: 金幣+50, 翻譯EPI+1, ★★★★★最佳答案 2015-06-29 13:37:06

希望樓主一句一句的看看

為了改善過孔的干法刻蝕中刻蝕率的不同導(dǎo)致 SD線和P-Si 接觸面積不一致的問題，同時解決 ELA工藝導(dǎo)致 P-Si 表面突起而造成SD與P-Si 點狀接觸的問題，探究了過孔的不同干法刻蝕工藝對TFT-LCD 性能的影響，從中找出最佳的過孔干法刻蝕工藝。
In order to overcome the inconsistent contact area between SD line and P-Si caused by the difference of etching rate in via hole dry etching technology, as well as to solve the point contact between SD line and P-Si made by P-Si surface convex during the ELA process, we explored the influence of various via hold dry etching technology upon the property of TFT-LCD, so as to find the optimal various via hold dry etching technology.

利用京東方產(chǎn) 線設(shè)備制備了兩種不同的 LTPS陣列樣品，樣品一的過孔工藝采用傳統(tǒng)的底部接觸方式，樣品二采用新的側(cè)面接觸方式,樣品一和樣品二其余的工藝過程一致。
Two different samples of LTPS array were prepared by using BOE production line equipment, wherein the sample 1 was prepared by adopting conventional Just Contact Method, while the sample 2 was prepared by adopting a new type of Side Contact Method. Besides the differences of contacting methods, there is no other differences of technological processes during making these two samples.

實驗結(jié)果表明：多點的U-I曲線由發(fā)散變?yōu)榧郏娮舆w移率有所提高；SEM數(shù)據(jù) 表明采用側(cè)面接觸方式能夠完全將P-Si刻穿。
The experimental results show that the multipoint U-I curve changes from a divergent curve to a concentration curve, and electron mobility increases in some degree; In addition, the SEM data show that the P-Si can be cut through completely by Side Contact Method.

結(jié)論：采用側(cè)面接觸方式能夠明顯的解決干法刻蝕中刻蝕率的不同導(dǎo)致 SD線和P-Si接觸面積不一致的問題，同時避免了 ELA工藝導(dǎo)致 P-Si表面突起而造成SD與P-Si 點狀接觸的問題，電學(xué)性能有所改善，同時減少了工藝時間，提高了產(chǎn)能。
Conclusion: Side Contact Method is able to overcome the inconsistent contact area between SD line and P-Si caused by the difference of etching rate of via hole dry etching technology, as well as to solve the point contact between SD line and P-Si made by P-Si surface convex during the ELA process,so that the TFT-LCD electrical performance can be improved. In addition the Side Contact Method can reduce the process time, and improve the productivity.

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2樓2015-06-29 08:08:47

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