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陳日飛新蟲 (初入文壇)
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[求助]
查找GaN system公司在加拿大的所有專利
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最近課題組有一個(gè)項(xiàng)目,打算申請(qǐng)專利,但是不清楚GaN system公司有沒(méi)有已經(jīng)申請(qǐng)了。查了加拿大的專利局,并沒(méi)有找到,可能是我不會(huì)找,求大神指教 |
主管區(qū)長(zhǎng) (知名作家)
火星駐地球聯(lián)絡(luò)處主任科員
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專家經(jīng)驗(yàn): +199 |
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以GaN Systems Inc.(Ottawa,CA)為申請(qǐng)人檢索到2個(gè)專利 [美國(guó)公開(kāi)] DEVICES AND SYSTEMS FOR POWER CONVERSION CIRCUITS- US14105569 申請(qǐng)人: GAN SYSTEMS INC.(Ottawa,CA) 申請(qǐng)日: 2013-12-13 - 主分類號(hào): H01L 25/18 20060101 [美國(guó)授權(quán)] High density gallium nitride devices using island topology- US13641003 申請(qǐng)人: GaN Systems Inc.(Ottawa,CA) 申請(qǐng)日: 2011-04-13 - 主分類號(hào): H01L 23/528 20060101 |

新蟲 (初入文壇)
新蟲 (初入文壇)
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我從加拿大專利局查到的也只有兩個(gè),其中一個(gè)和你的第二個(gè)一樣。然后我從美國(guó)的專利局根本一個(gè)都沒(méi)查到,我感覺(jué)怎么可能這么少?您能幫我再查一遍以及該公司在歐洲的專利有沒(méi)有?或是告訴我怎么查嗎?萬(wàn)分感謝! |
主管區(qū)長(zhǎng) (知名作家)
火星駐地球聯(lián)絡(luò)處主任科員
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專家經(jīng)驗(yàn): +199 |

金蟲 (知名作家)
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1.EPO檢索 “gan systems” 6個(gè)專利,分別為: "FAULT TOLERANT DESIGN FOR LARGE AREA NITRIDE SEMICONDUCTOR DEVICES" US2015162252 (A1) "FAULT TOLERANT DESIGN FOR LARGE AREA NITRIDE SEMICONDUCTOR DEVICES" WO2015061881 (A1) "DEVICES AND SYSTEMS COMPRISING DRIVERS FOR POWER CONVERSION CIRCUITS" WO2014094115 (A1) "HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" KR20130088743 (A) "Gallium nitride power devices using island topography" TW201234538 (A) "ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" US9064947 (B2); US2012138950 (A1) 2、檢索同族專利 WO2015061881 (A1)同族專利: "FAULT TOLERANT DESIGN FOR LARGE AREA NITRIDE SEMICONDUCTOR DEVICES" WO2015061881 (A1) "Island matrixed gallium nitride microwave and power switching transistors" AU2010281317 (A1) "High density gallium nitride devices using island topology" AU2011241423 (A1) "ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" CA2769940 (A1) "HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" CA2796155 (A1); CA2796155 (C) "High density gallium nitride devices using island topology" CN102893392 (A); CN102893392 (B) "ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" EP2465141 (A1) "HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" EP2559064 (A1) "ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" JP2013501362 (A) "HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" JP2013528930 (A) "ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" KR20120041237 (A) "HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" KR20130088743 (A) "Gallium nitride power devices using island topography" TW201234538 (A) "HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" US2013049010 (A1); US8791508 (B2) "Gallium Nitride Power Devices Using Island Topography" US2011186858 (A1); US9029866 (B2) "ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" US9064947 (B2); US2012138950 (A1) "FAULT TOLERANT DESIGN FOR LARGE AREA NITRIDE SEMICONDUCTOR DEVICES" US2015162252 (A1) "ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" WO2011014951 (A1) "HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" WO2011127568 (A1); WO2011127568 (A4) "GALLIUM NITRIDE POWER DEVICES USING ISLAND TOPOGRAPHY" WO2012103633 (A1) 3.用發(fā)明人檢索 自行去epo檢索吧 |
金蟲 (知名作家)
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