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Benzotriazole removal on post-Cu CMP cleaning
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2015-09-24 17:49:43, 1.55 M
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baiyuefei
新蟲
風雪
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感謝參與，應助指數(shù) +1
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Accession number: 20152500950445 Title: Benzotriazole removal on post-Cu CMP cleaning Authors: Tang, Jiying1, 2; Liu, Yuling1 ; Sun, Ming1; Fan, Shiyan1; Li, Yan1 Author affiliation: 1 Institute of Microelectronics, Hebei University of Technology, Tianjin, China 2 Electrical Engineering Department, Tianjin Metallurgical Vocation-Technology Institute, Tianjin, China Corresponding author: Liu, Yuling Source title: Journal of Semiconductors Abbreviated source title: J. Semicond. Volume: 36 Issue: 6 Issue date: June 1, 2015 Publication year: 2015 Article number: 066001 Language: English ISSN: 16744926 Document type: Journal article (JA) Publisher: Institute of Physics Publishing Abstract: This work investigates systematically the effect of FA/O II chelating agent and FA/O I surfactant in alkaline cleaning solutions on benzotriazole (BTA) removal during post-Cu CMP cleaning in GLSI under the condition of static etching. The best detergent formulation for BTA removal can be determined by optimization of the experiments of single factor and compound cleaning solution, which has been further confirmed experimentally by contact angle (CA) measurements. The resulting solution with the best formulation has been measured for the actual production line, and the results demonstrate that the obtained cleaning solution can effectively and efficiently remove BTA, CuO and abrasive SiO<inf>2</inf> without basically causing interfacial corrosion. This work demonstrates the possibility of developing a simple, low-cost and environmentally-friendly cleaning solution to effectively solve the issues of BTA removal on post-Cu CMP cleaning in a multi-layered copper wafer. © 2015 Chinese Institute of Electronics. Number of references: 11 Main heading: Solution mining Controlled terms: Chelation - Cleaning - Contact angle - Etching - Surface active agents Uncontrolled terms: Alkaline cleaning - Benzotriazole(BTA) - Benzotriazoles - Chelating agent - Cleaning solution - Detergent formulations - Etching rate - Production line Classification code: 502.1 Mine and Quarry Operations - 631.1.1 Liquid Dynamics - 802.2 Chemical Reactions - 802.3 Chemical Operations - 803 Chemical Agents and Basic Industrial Chemicals DOI: 10.1088/1674-4926/36/6/066001 Database: Compendex Compilation and indexing terms, © 2015 Elsevier Inc. Full-text and Local Holdings Links FULL TEXT LINKS Tools in Scopus Cited by: This article has been cited in Scopus since 1996. -------------------------------------------------------------------------------- Author details: View Author Details in Scopus. Tang, J. Liu, Y. Sun, M. Fan, S. Li, Y. View All AuthorsHide AuthorsLearn more about Scopus Add a tag Add a tag scope Public Private My Institution Login for groups Notify Group Checkbox Email Group Add a tag text box -------------------------------------------------------------------------------- My tags -------------------------------------------------------------------------------- Save this on Delicious -------------------------------------------------------------------------------- About Ei About Ei History of Ei About Engineering Village About Engineering Village Accessibility Statement Content Available Who uses EV? Contact and Support Contact and support Blog About Elsevier About Elsevier Terms and Conditions Privacy Policy |
2樓2015-09-24 18:55:05
baiyuefei
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【答案】應助回帖
★ ★ ★ ★ ★
一點紅: 金幣+5, ★★★★★最佳答案 2015-09-24 19:26:30
sunshan4379: LS-EPI+1, 感謝應助！ 2015-09-24 19:44:15
一點紅: 金幣+5, ★★★★★最佳答案 2015-09-24 19:26:30
sunshan4379: LS-EPI+1, 感謝應助！ 2015-09-24 19:44:15
| Accession number: 20152500950445 |
3樓2015-09-24 18:55:15
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