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kevinhan1: 金幣+30, 翻譯EPI+1, ★★★★★最佳答案 2016-01-06 10:16:32
2.由于DSi DM，忽略 合金元素 擴(kuò)散，則按照 誤差解 可求得 合金元素 為零時(shí) 的 等效解 為
Due to DSi DM, diffusion of alloy elements can be ignored, and thus it can obtain the equivalent solution when alloy element is zero based on error solution
3.將上述解 再換算成 實(shí)際 合金元素含量 條件下的 解，即按式（1）有
Above solutions can be converted into the solutions under the condition of practical concentration of alloy elements, i.e. according to equation (1), it can get:
4.可見界面 兩側(cè) Si的 濃度差 與 兩側(cè) 合金元素濃度差 有關(guān)。在 實(shí)際擴(kuò)散中，由于 Si的擴(kuò)散 遠(yuǎn)快于 合金元素的 擴(kuò)散，在剛開始的 一段時(shí)間內(nèi)，界面上 維持較大 的Si 濃度差，但隨著 擴(kuò)散的進(jìn)行，界面上 合金元素的 濃度差 將逐漸消失，從而Si 的濃度差 也隨之消失。
The concentration difference of Si between both sides of interface is related to the concentration difference of alloy elements between both sides. In practical situation, the diffusion velocity of Si is much faster than that of alloy elements, moreover in the very beginning period of diffusion, the concentration difference of Si on interface is relative big, however with the proceeding of diffusion, the concentration difference of alloy elements gradually disappears, so does the concentration difference of Si. |
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