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yanjiao12新蟲(chóng) (初入文壇)
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[求助]
聚合物/ZnO太陽(yáng)能電池
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Polymer-based solar cells consisting of ZnO nanorods and poly(1-methoxy-4-(2-ethylhexyloxy)-p-phenyl-enevinylene) (MEH-PPV) are investigated by current voltage characterization and intensity modulatedphotovoltage spectroscopy (IMVS). The high quality ZnO nanorod arrays were prepared by electrodeposition, in which the length (Ln) and the concentration of deep level defects of ZnO nanorods were controlled bydeposition time (Td). Results show that increasing Td leads to ZnO nanorods with linearly increased Ln butdifferently increased defect concentration for the MEH-PPV/ZnO solar cells, providing a peak device power conversion efficiency of 0.34% at AM 1.5 illumination (100 mW/cm2) for Td 10 min. The electron lifetimesin MEH-PPV/ZnO nanorod devices at open circuit were studied by means of IMVS for the first time, and theinfluences of Ln and defect concentration on the charge recombination kinetics and device performance were revealed. It is found that, in the MEH-PPV/ZnO devices with high quality ZnO nanorods with rather lowdefect concentration, both photocurrent and recombination rate are mainly dependent on the Ln value as a result of the exponential attenuation of incident light intensity in the device, but the open circuit voltage Voc is more sensitive to the defect concentration. The present study provides new insights into designing the nanostructures for the hybrid photovoltaic devices based on vertically aligned one-dimensional nanoarrays. |
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8814402
至尊木蟲(chóng) (職業(yè)作家)
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2樓2011-07-11 16:11:01
夏露相隨
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3樓2011-07-11 16:33:11
8814402
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【答案】應(yīng)助回帖
yanjiao12(金幣+120, 翻譯EPI+1): 很好，謝謝 2011-07-11 20:27:45
| Polymer-based solar cells consisting of ZnO nanorods and poly(1-methoxy-4-(2-ethylhexyloxy)-p-phenyl-enevinylene) (MEH-PPV) are investigated by current voltage characterization and intensity modulated photo voltage spectroscopy (IMVS).以伏安法和IMVS研究了由ZnO納米棒和MEH-PPV組成的聚合物基太陽(yáng)能電池。The high quality ZnO nanorod arrays were prepared by electrodeposition, in which the length (Ln) and the concentration of deep level defects of ZnO nanorods were controlled by deposition time (Td). 高質(zhì)量ZnO納米棒陣列由電沉積法制備，其中ZnO納米棒的長(zhǎng)度和深能級(jí)缺陷濃度通過(guò)沉積時(shí)間加以控制。Results show that increasing Td leads to ZnO nanorods with linearly increased Ln but differently increased defect concentration for the MEH-PPV/ZnO solar cells, providing a peak device power conversion efficiency of 0.34% at AM 1.5 illumination (100 mW/cm2) for Td 10 min. 結(jié)果顯示，沉積時(shí)間增加導(dǎo)致ZnO納米棒長(zhǎng)度線(xiàn)性增加，但缺陷濃度呈不同程度的增加，當(dāng)沉積時(shí)間為10min，可獲得AM1.5照度下0.34%的峰裝置能量變換率。The electron lifetimes in MEH-PPV/ZnO nanorod devices at open circuit were studied by means of IMVS for the first time, and the influences of Ln and defect concentration on the charge recombination kinetics and device performance were revealed. MEH-PPV/ZnO 首次以IMVS方法研究了開(kāi)路情況下納米棒裝置中的電子壽命，揭示了納米棒長(zhǎng)度和缺陷濃度對(duì)電荷復(fù)合動(dòng)力學(xué)和裝置性能的影響。It is found that, in the MEH-PPV/ZnO devices with high quality ZnO nanorods with rather low defect concentration, both photocurrent and recombination rate are mainly dependent on the Ln value as a result of the exponential attenuation of incident light intensity in the device, but the open circuit voltage Voc is more sensitive to the defect concentration. 研究發(fā)現(xiàn)，在具有相當(dāng)?shù)腿毕轁舛鹊母哔|(zhì)量ZnO納米棒的MEH-PPV/ZnO 裝置中，由于入射光強(qiáng)度的指數(shù)衰減，光電流和復(fù)合率都主要依賴(lài)于納米棒長(zhǎng)度值，而開(kāi)路電壓則對(duì)缺陷濃度更為敏感。The present study provides new insights into designing the nanostructures for the hybrid photovoltaic devices based on vertically aligned one-dimensional nanoarrays.當(dāng)前研究對(duì)設(shè)計(jì)基于垂直排列的一維納米陣列混合動(dòng)力光電裝置所用納米結(jié)構(gòu)提供了新的啟示。 |
4樓2011-07-11 17:59:11
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