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[求助]
聚合物/ZnO太陽能電池
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Polymer-based solar cells consisting of ZnO nanorods and poly(1-methoxy-4-(2-ethylhexyloxy)-p-phenyl-enevinylene) (MEH-PPV) are investigated by current voltage characterization and intensity modulatedphotovoltage spectroscopy (IMVS). The high quality ZnO nanorod arrays were prepared by electrodeposition, in which the length (Ln) and the concentration of deep level defects of ZnO nanorods were controlled bydeposition time (Td). Results show that increasing Td leads to ZnO nanorods with linearly increased Ln butdifferently increased defect concentration for the MEH-PPV/ZnO solar cells, providing a peak device power conversion efficiency of 0.34% at AM 1.5 illumination (100 mW/cm2) for Td 10 min. The electron lifetimesin MEH-PPV/ZnO nanorod devices at open circuit were studied by means of IMVS for the first time, and theinfluences of Ln and defect concentration on the charge recombination kinetics and device performance were revealed. It is found that, in the MEH-PPV/ZnO devices with high quality ZnO nanorods with rather lowdefect concentration, both photocurrent and recombination rate are mainly dependent on the Ln value as a result of the exponential attenuation of incident light intensity in the device, but the open circuit voltage Voc is more sensitive to the defect concentration. The present study provides new insights into designing the nanostructures for the hybrid photovoltaic devices based on vertically aligned one-dimensional nanoarrays. |
至尊木蟲 (職業(yè)作家)
至尊木蟲 (職業(yè)作家)
| Polymer-based solar cells consisting of ZnO nanorods and poly(1-methoxy-4-(2-ethylhexyloxy)-p-phenyl-enevinylene) (MEH-PPV) are investigated by current voltage characterization and intensity modulated photo voltage spectroscopy (IMVS).以伏安法和IMVS研究了由ZnO納米棒和MEH-PPV組成的聚合物基太陽能電池。The high quality ZnO nanorod arrays were prepared by electrodeposition, in which the length (Ln) and the concentration of deep level defects of ZnO nanorods were controlled by deposition time (Td). 高質量ZnO納米棒陣列由電沉積法制備,其中ZnO納米棒的長度和深能級缺陷濃度通過沉積時間加以控制。Results show that increasing Td leads to ZnO nanorods with linearly increased Ln but differently increased defect concentration for the MEH-PPV/ZnO solar cells, providing a peak device power conversion efficiency of 0.34% at AM 1.5 illumination (100 mW/cm2) for Td 10 min. 結果顯示,沉積時間增加導致ZnO納米棒長度線性增加,但缺陷濃度呈不同程度的增加,當沉積時間為10min,可獲得AM1.5照度下0.34%的峰裝置能量變換率。The electron lifetimes in MEH-PPV/ZnO nanorod devices at open circuit were studied by means of IMVS for the first time, and the influences of Ln and defect concentration on the charge recombination kinetics and device performance were revealed. MEH-PPV/ZnO 首次以IMVS方法研究了開路情況下納米棒裝置中的電子壽命,揭示了納米棒長度和缺陷濃度對電荷復合動力學和裝置性能的影響。It is found that, in the MEH-PPV/ZnO devices with high quality ZnO nanorods with rather low defect concentration, both photocurrent and recombination rate are mainly dependent on the Ln value as a result of the exponential attenuation of incident light intensity in the device, but the open circuit voltage Voc is more sensitive to the defect concentration. 研究發(fā)現(xiàn),在具有相當低缺陷濃度的高質量ZnO納米棒的MEH-PPV/ZnO 裝置中,由于入射光強度的指數衰減,光電流和復合率都主要依賴于納米棒長度值,而開路電壓則對缺陷濃度更為敏感。The present study provides new insights into designing the nanostructures for the hybrid photovoltaic devices based on vertically aligned one-dimensional nanoarrays.當前研究對設計基于垂直排列的一維納米陣列混合動力光電裝置所用納米結構提供了新的啟示。 |
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