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okwl木蟲 (小有名氣)
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[求助]
關于XPS分析方面的翻譯修改下英文語法-編輯說語法錯誤
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原文:位于283.65 eV的較低能量的峰是典型的由于Si產(chǎn)生的化學位移,所以應該為C–Si鍵。強度最低的峰的結(jié)合能為285.66 eV應該是O或者N的-I效應引起的位移,所以推斷應該是C–O 或 C–N鍵。 The peak with lower energy at 283.65 eV is typical for the chemical shift caused by Si Inductive Effects , corresponds to C–Si. The -I effects of O or N lead to the lowest intensity peaks at binding energies of 285.66 eV that can be assigned to C–O or C–N. |

鐵桿木蟲 (知名作家)
| The peak with lower energy at 283.65 eV is a typical chemical shift caused by Si Inductive Effects , corresponding to C–Si. The binding energy of lowest intensity peaks is 285.66 as a result of -I effect of O or N, which can be inferred as C–O or C–N. |

鐵桿木蟲 (知名作家)

木蟲 (小有名氣)
| The peak of 283.65 eV in lower energy are is a typical chemical shift caused by Si Inductive Effects , ascribed to C–Si bond. The peaks with lowest binding energy at 285.66 can be the shift lead by -I effect of O or N, which can be asceibed to C–O or C–N. |
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