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mapleer木蟲 (小有名氣)
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[求助]
幫忙修改英文摘要,謝謝
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| In this paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) had been investigated by means of high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted from HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. |
鐵桿木蟲 (著名寫手)
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In this paper strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) had been investigated by means of high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted from HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. 翻譯的很好啊,沒有什么錯誤。由于專業(yè)不同,只能幫你看看基本的語法。 |
至尊木蟲 (文壇精英)
| In this paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) was experimentelly investigated by high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted by HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. |
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