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mapleer木蟲 (小有名氣)
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[求助]
幫忙修改英文摘要，謝謝
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| In this paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) had been investigated by means of high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted from HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. |
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鐵桿木蟲 (著名寫手)
- 翻譯EPI: 40
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【答案】應(yīng)助回帖
★ ★ ★ ★ ★ ★
phu_grassman: 金幣+1, thanks 2013-01-11 12:48:40
sltmac: 金幣+5 2013-03-12 13:25:39
phu_grassman: 金幣+1, thanks 2013-01-11 12:48:40
sltmac: 金幣+5 2013-03-12 13:25:39
|
In this paper strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) had been investigated by means of high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted from HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. 翻譯的很好啊，沒(méi)有什么錯(cuò)誤。由于專業(yè)不同，只能幫你看看基本的語(yǔ)法。 |
2樓2013-01-10 20:53:25
zxyan
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【答案】應(yīng)助回帖
★ ★ ★ ★ ★ ★
phu_grassman: 金幣+1, thanks 2013-01-11 12:49:19
sltmac: 金幣+5 2013-03-12 13:25:44
phu_grassman: 金幣+1, thanks 2013-01-11 12:49:19
sltmac: 金幣+5 2013-03-12 13:25:44
| In this paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) was experimentelly investigated by high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted by HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. |
3樓2013-01-10 21:36:53
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