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| 本帖產(chǎn)生 1 個 翻譯EPI ，點(diǎn)擊這里進(jìn)行查看 | |||
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livesun木蟲 (小有名氣)
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[求助]
求翻譯下面一段，翻譯成英語。
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| 一般認(rèn)為，晶體管器件中絕緣層的表面粗糙程度是衡量器件性能，即載流子遷移率大小的一個重要指標(biāo)。絕緣層的表面光滑, 平整度好, 則絕緣膜中的表面缺陷如針孔和陷阱就少，便于載流子的通過；反之，載流子會被絕緣膜中的表面缺陷所捕獲，從而降低器件的遷移率， 這與載流子遷移率的測定結(jié)果相一致。一方面A 溶液處理后改變了絕緣層表面蒸鍍酞菁銅層的膜的生長性質(zhì)，由于可以使B薄膜的表面變成更加疏水的狀態(tài)，降低了表面自由能，從而更有利于酞菁銅薄膜在基片上的吸附；其次是A溶液處理后為絕緣層提供了更為平滑的表面，降低了位于介面處的缺陷濃度，從而優(yōu)化了薄膜的生長行為，使介面處酞菁銅分子排列更為有序，進(jìn)而提高了場效應(yīng)遷移率，這使A溶液處理的晶體管器件性能得以提高。 |
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nwsuafliu
木蟲 (著名寫手)
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【答案】應(yīng)助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
livesun: 金幣+43, ★有幫助 2013-01-23 12:53:35
livesun: 金幣+43, ★有幫助 2013-01-23 12:53:35
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潤色了一遍，如下： Surface roughness of the insulating layer in a transistor device is generally considered as an important parameter in the evaluation of the device performance, which is defined as the carrier mobility. Smooth and flat surface of the insulating layer indicates fewer surface defects such as pinholes and traps in the insulating film and is better passed through by the carriers; otherwise, the carriers will be caught by surface defects of the insulation film and hence reduces the device mobility, which is in agreement with the measurement of carrier mobility. On the one hand, the growth properties of evaporated copper phthalocyanine (CuPc) film on the insulation surface were altered after solution A treatment, which increased the surface hydrophobility of B film and reduced surface free energy, thereby facilitating the adsorption of CuPc film onto the chip. On the other hand, the treatment with solution A provides a more smooth surface for the insulating layer and reduces the interfacial defect concentration, thus optimizing the growth behavior of the film and generating more ordered arrangement of CuPc molecules at the interface. As a result, the field effect migration rate is increased, which improved the performance of the A solution-treated transistor device. |
3樓2013-01-23 10:53:31
四月聞鶯
木蟲 (著名寫手)
Life is translation
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Carena: 金幣+3, 很不錯，感謝應(yīng)助 2013-01-22 22:36:11
livesun: 金幣+42, 翻譯EPI+1, ★有幫助 2013-01-23 12:53:20
Carena: 金幣+3, 很不錯，感謝應(yīng)助 2013-01-22 22:36:11
livesun: 金幣+42, 翻譯EPI+1, ★有幫助 2013-01-23 12:53:20
| Generally speaking, the surface roughness of the insulating layer in a transistor device is an important index in measuring the performance of the device, which is the carrier mobility. Smooth and flat surface of the insulating layer indicates fewer defects such as pinholes and traps in the insulating film, and thus it’s easier for carriers to go through; otherwise, the carriers will be caught by superficial defects of the insulating film and the migration rate of the device will be reduced. So the migration rate of the device and that of the carriers are consistent. On the one hand, the growing property of evaporation CuPc film on the insulating surface was changed after solution A is treated, which makes the surface of B film more hydrophobic and reduces surface free energy, thus more conducive to the adsorption of CuPc film onto the base tag. On the other hand, the treated A solution provides a more smooth surface for the insulating layer and reduces the defect density at the interface, thus optimizes the growth of the film, and the arrangement of CuPc molecules at the interface is much more in order and the field effect migration rate is hence improved, which enhances the performance of the transistor device. |
2樓2013-01-22 18:39:07
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