| 2 | 1/1 | 返回列表 |
| 查看: 484 | 回復(fù): 1 | |||
| 本帖產(chǎn)生 1 個 翻譯EPI ,點擊這里進行查看 | |||
syy911銅蟲 (初入文壇)
|
[求助]
求英文翻譯
|
||
|
The photocatalytic splitting of water using oxide semiconductors is initiated by the direct absorption of a photon, which creates separated electrons and holes in the energy band gap of the material. These charges can move to the surface of the semiconductor particle and react with water, provided the potential difference of this reaction exceeds 1.23 eV, dictated by the standard potential E0 of water being--1.23 (standard hydrogen electrode,SHE, pH=0). The oxide semiconductor system we used for this reaction is InTaO4 which crystallizes in the monoclinic wolframite-type structure with space group P2/a. The structure (Fig. la and b) contains TaO6 and InO6 octahedra in a unit cell. The InO6 octahedra share edges to form zigzag chains along the [100] direction, with individual [InO6]∞ octahedra chains Linked by TaO6 octahedra into a threedimensional network. The volumes of the InO6 and TaO6 octahedra in InTaO4 are 13.601 and 10.648Å 3, respectively. Because the ionic radius of Ni2+ (0.78 Å is much smaller than that of In3+ (0.92 Å ,substituting In3+ by Ni2+ should reduce the volume of the InO6 octahedra, and hence the cell volume in InTaO4 This should in turn affect the direct metal-metal bonding in the crystal, with the In-In distance shortened, resulting in profound alterations of the electronic properties of the compounds. |
木蟲 (小有名氣)
|
使用氧化物半導(dǎo)體對水進行光催化裂解是通過吸收光子誘發(fā)的,被吸收的光子能在材料的能帶隙中產(chǎn)生分離的電子和空穴。如果這個反應(yīng)的電勢差超過1.23V,這些電荷遷移到了半導(dǎo)體顆粒的表面就能和水進行反應(yīng),因為水的標準電勢E0是1.23V(標準氫電級,SHE,pH=0)。 我們在這個反應(yīng)中使用的氧化物半導(dǎo)體是InTaO4,它具有單斜晶黑鎢礦的晶體結(jié)構(gòu),空間群P2/a。這種結(jié)構(gòu)如圖(la 和 b)所示,一個晶胞單元中包含TaO6和InO6八面體。沿[100]方向InO6八面體共用邊線形成鋸齒狀,而單個InO6和八面體鏈通過TaO6連接形成一個三維的網(wǎng)絡(luò)結(jié)構(gòu)。在InTaO4中,InO6和TaO6的體積分別為13.601和10.648立方埃米。因為Ni2+的離子半徑(0.78埃)比In3+(0.92埃)小得多,所以通過Ni2+取代In3+可以減少InO6八面體的體積,進而減少InTaO4的晶胞體積,相應(yīng)的這種變化會影響到晶體中的金屬鍵長,例如:In-In鍵縮短,這將導(dǎo)致化合物的電子性質(zhì)發(fā)生重大改變。 |

| 2 | 1/1 | 返回列表 |
| 最具人氣熱帖推薦 [查看全部] | 作者 | 回/看 | 最后發(fā)表 | |
|---|---|---|---|---|
|
[考研] 081200-11408-276學(xué)碩求調(diào)劑 +6 | 崔wj 2026-03-26 | 6/300 |
|
|---|---|---|---|---|
|
[考研] 305求調(diào)劑 +7 | RuiFairyrui 2026-03-28 | 7/350 |
|
|
[考研] 298求調(diào)劑 +3 | 種圣賜 2026-03-28 | 3/150 |
|
|
[考研] 本科雙非材料,跨考一志愿華電085801電氣,283求調(diào)劑,任何專業(yè)都可以 +6 | 芝士雪baoo 2026-03-28 | 7/350 |
|
|
[考研] 332求調(diào)劑 +4 | @MZB382400 2026-03-28 | 4/200 |
|
|
[考研] 299求調(diào)劑 +7 | 嗯嗯嗯嗯2 2026-03-27 | 7/350 |
|
|
[考研] 0856,材料與化工321分求調(diào)劑 +12 | 大饞小子 2026-03-27 | 13/650 |
|
|
[考研] 張芳銘-中國農(nóng)業(yè)大學(xué)-環(huán)境工程專碩-298 +4 | 手機用戶 2026-03-26 | 4/200 |
|
|
[考研] 求調(diào)劑推薦 材料 304 +15 | 荷包蛋hyj 2026-03-26 | 15/750 |
|
|
[考研] 308求調(diào)劑 +7 | 墨墨漠 2026-03-25 | 7/350 |
|
|
[考研] 考研調(diào)劑 +10 | 呼呼?~+123456 2026-03-24 | 10/500 |
|
|
[考研] 求調(diào)劑 +3 | 劉柯@ 2026-03-24 | 4/200 |
|
|
[考研] 材料求調(diào)劑 +5 | .m.. 2026-03-25 | 5/250 |
|
|
[考研] 中國科學(xué)院深圳先進技術(shù)研究院-光纖傳感課題組招生-中國科學(xué)院大學(xué)、深圳理工大學(xué)聯(lián)培 +5 | YangTyu1 2026-03-26 | 5/250 |
|
|
[考研] 352求調(diào)劑 +4 | 大米飯! 2026-03-22 | 4/200 |
|
|
[考研] 生物技術(shù)與工程 +3 | 1294608413 2026-03-25 | 4/200 |
|
|
[考研] 293求調(diào)劑 +7 | 加一一九 2026-03-24 | 7/350 |
|
|
[考研] 300分,材料,求調(diào)劑,英一數(shù)二 +5 | 超贊的 2026-03-24 | 5/250 |
|
|
[考研] 284求調(diào)劑 +3 | yanzhixue111 2026-03-23 | 6/300 |
|
|
[考研] 280分求調(diào)劑 一志愿085802 +4 | PUMPT 2026-03-22 | 7/350 |
|