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拿出一半家產(chǎn),求高手幫我的一段英文潤色啊.謝謝
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1。The structures of the AlN(1 nm)/MN(d nm)/AlN(1 nm) are sketched in Fig. 1 (a). Fig. 1 (b) shows the AR-H curves for the AlN(1 nm)/MN(d nm)/AlN(1 nm) films [d =5, 30, 80] before and after annealing at 400 °C. One can see the AR value drops from 1.0% for the as-deposited sample to about only 0.2% for the annealed one when d =5 nm. However, for d =30 nm, the AR value reaches about 3% for the annealed sample, which is very close to that of the sample in the as-grown state. In contrast, when d =80 nm, the AR value increases from 3.7% for the as-deposited sample to 4.7% for the annealed one, the value of which even exceeds the bulk value. As expected, Figure 1(c) shows the relationship between the AR and the MN thickness for the AlN/MN/AlN before and after annealing at 400 °C. It is noted that the AR values of the annealed samples are significantly lower than those of the as-grown ones when d < 30nm, whereas when the film thickness exceeds a critical thickness of 30nm, AR values of the annealed samples are significantly higher than those of the as-deposited samples. Apparently, AR change after annealing shows a significant thickness dependent behavior. 文中有些結(jié)構(gòu)被替換掉了，請見諒 2. the grain size changes little after annealing, so in this case, what causing the abnormal resistivity increase and the resulted AR reduction remains indefinitive. [ Last edited by 檸檬樹 on 2013-3-23 at 12:05 ] |
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bwshanxi
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【答案】應(yīng)助回帖
| 結(jié)構(gòu)AlN（1納米）/ MN（d納米）/AlN（1納米）的繪制如圖1（a）圖1（b）表示退火前和退火后對AR-H的AlN（1納米）/ MN（d納米）/AlN（1納米）薄膜〔d= 5，30，80] 曲線在400℃�？梢钥吹紸R值從1.0％下降為沉積的樣品大約只有0.2％的退火當(dāng)d =5納米時候。然而，當(dāng)d =30nm時候，在AR值達(dá)到退火的樣品的約3％，這是非常接近在生長狀態(tài)的樣品。相反，當(dāng)d =80nm時候，AR的值從3.7％增加為沉積樣品退火的1至4.7％，甚至超過大容量值，它的值。正如預(yù)期的那樣，圖1（c）示出的關(guān)系之間的AR和MN厚度的AlN/ MN/ AlN成前和退火后，在400℃下值得注意的是，退火后的樣品的AR值明顯低于那些生長的當(dāng)d<30nm左右，而當(dāng)薄膜厚度超過某一臨界厚度為30nm時，退火后的樣品的AR值顯著高于如此沉積的樣品。顯然，AR變化后退火顯示了顯著的厚度依賴行為。 |
2樓2013-03-23 12:48:41
hookhans
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檸檬樹: 金幣+30, 翻譯EPI+1, ★★★★★最佳答案, 非常有用 非常感謝啊 2013-03-23 16:30:52
檸檬樹: 金幣+30, 翻譯EPI+1, ★★★★★最佳答案, 非常有用 非常感謝啊 2013-03-23 16:30:52
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1。The structures of the AlN(1 nm)/MN(d nm)/AlN(1 nm) and the AR-H curves of the AlN(1 nm)/MN(d nm)/AlN(1 nm) films [d =5, 30, 80] before and after annealing at 400 °C are shown in Fig. 1 (a) and Fig. 1 (b), respectively. It can be seen that the AR value drops from 1.0% to 0.2% after annealing the sample with d =5 nm. However, for the sample with d =30 nm, the AR value reaches about 3% after annealing, which is very close to that of the as-grown sample. In contrast, the AR value increases from 3.7% to 4.7% for the sample with d =80 nm after annealing, (the value of) which even exceeds the bulk value. Figure 1(c) shows the relationship between the AR and the MN thickness of the AlN/MN/AlN before and after annealing at 400 °C. It is noted that the AR values of the annealed samples are significantly lower than those of the as-grown ones when d < 30nm, whereas the AR values of the annealed samples are significantly higher than those of the as-deposited samples when the film thickness exceeds a critical thickness of 30nm. Apparently, AR change after annealing shows a significant thickness dependent behavior. 2. Since the grain size changes little after annealing, it still remains unclear exactly what causes the increase of the abnormal resistivity and the consequent AR reduction. |
3樓2013-03-23 16:16:15
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