版塊導航: 正在加載中...

登錄注冊

應(yīng)《網(wǎng)絡(luò)安全法》要求，自2017年10月1日起，未進行實名認證將不得使用互聯(lián)網(wǎng)跟帖服務(wù)。為保障您的帳號能夠正常使用，請盡快對帳號進行手機號驗證，感謝您的理解與支持！

24小時熱門版塊排行榜

北京石油化工學院2026年研究生招生接收調(diào)劑公告

返回列表

本帖產(chǎn)生 1 個翻譯EPI ，點擊這里進行查看

hongyangb

銅蟲 (初入文壇)

應(yīng)助: 0 (幼兒園)
金幣: 109.5
帖子: 49
在線: 7.5小時
蟲號: 2158185
注冊: 2012-11-30
專業(yè): 無機非金屬類光電信息與功

[求助] 求英譯一段中文摘要，急用！如果覺得內(nèi)容有哪里不太通順請告知。非常感謝

摘要：鐵酸鉍是目前發(fā)現(xiàn)的唯一能在室溫下表現(xiàn)出多鐵性的材料，具有禁帶寬度較小、剩余極化強度較大、居里溫度較高的優(yōu)良特性，在光電器件、自旋電子器件、鐵電隨機存儲器、磁電存儲單元等領(lǐng)域有著廣闊的應(yīng)用前景。但由于鐵酸鉍薄膜存在漏電流較大、磁電耦合性較弱等問題，制約了它的實際應(yīng)用。國內(nèi)外學者多采用優(yōu)化鐵酸鉍薄膜的制備工藝、離子摻雜等方法來改善其結(jié)構(gòu)與性能。其中，離子摻雜具有操作方便、易于實現(xiàn)薄膜的微結(jié)構(gòu)及性能調(diào)控等優(yōu)點，因而受到廣泛關(guān)注。本文綜述了國內(nèi)外近年關(guān)于鐵酸鉍薄膜電性能摻雜改性的相關(guān)工作，詳細闡述了不同種類的摻雜，包括A位（三價鑭系元素與二價堿金屬元素）、B位（過渡金屬元素等）以及AB位共摻雜。并根據(jù)摻雜對鐵酸鉍薄膜的漏電流及剩余極化強度的影響，對A位摻雜和B位摻雜中的元素進行了分類，系統(tǒng)的總結(jié)了各類元素摻雜改性的效果及其機理。最后，提出了鐵酸鉍薄膜亟待解決的問題。

回復此樓

» 猜你喜歡

求收留已經(jīng)有5人回復
375求調(diào)劑已經(jīng)有4人回復
340求調(diào)劑已經(jīng)有6人回復
298求調(diào)劑已經(jīng)有3人回復
085601材料工程找調(diào)劑已經(jīng)有9人回復
考研調(diào)劑已經(jīng)有4人回復
面上5B能上會嗎？已經(jīng)有3人回復
求調(diào)劑，一志愿南京航空航天大學，080500材料科學與工程學碩，總分289分已經(jīng)有7人回復
086000生物與醫(yī)藥調(diào)劑已經(jīng)有9人回復
343求調(diào)劑已經(jīng)有6人回復

1樓 2014-09-12 17:00:59

已閱回復此樓關(guān)注TA 給TA發(fā)消息送TA紅花 TA的回帖

ssssllllnnnn

至尊木蟲 (知名作家)

Translator and Proofreader

翻譯EPI: 1690
應(yīng)助: 452 (碩士)
金幣: 31580.9
紅花: 100
帖子: 7681
在線: 19966.6小時
蟲號: 3328089
注冊: 2014-07-17
專業(yè): 腫瘤發(fā)生

【答案】應(yīng)助回帖

★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
RXMCDM: 金幣+1, 多謝應(yīng)助！ 2014-09-14 10:56:21
hongyangb: 金幣+20, 翻譯EPI+1, ★★★很有幫助, 非常感謝 2014-09-14 12:43:12

Abstract: Bismuth ferrite is the only material found so far with the multiferroic properties at room temperature. It has several excellent features, including a smaller band gap, large remnant polarization and high Curie temperature. Therefore, bismuth ferrite has broad application prospects in optoelectronic devices, self-spinning electronic devices, ferroelectric random access memories, magnetic storage units, and other areas. However, its practical application has been limited largely because of the presence of a large leakage current and weak magnetic coupling issues of bismuth ferrite films. Most of the domestic and international scholars use the optimized preparation process of bismuth ferrite thin films, ion doping and other methods to improve its structure and performance. Among them, the ion doping is easy to operate, easy to implement micro-structure, and easy to control its performance, and therefore attracted widespread attention. This paper reviews the domestic and international publications in recent years related to electrical properties of doped bismuth ferrite thin films. It is described in great details in different types of doping, including the A-site (trivalent lanthanide and divalent alkali metal elements), B site (transition metals, etc.) and A-B sites co-doped. The elements in A-site and B-site doping are clarified based on the effects of doping on the leakage current of bismuth ferrite films and residual polarization intensity. The effects and mechanisms of various types of elements doping are summarized systemically. Finally, the problems are presented related to the bismuth ferrite films need to be resolved urgently.

贊一下(2人)

回復此樓

2樓2014-09-14 10:37:07

已閱回復此樓關(guān)注TA 給TA發(fā)消息送TA紅花 TA的回帖

相關(guān)版塊跳轉(zhuǎn) 我要訂閱樓主 hongyangb 的主題更新