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北京石油化工學(xué)院2026年研究生招生接收調(diào)劑公告

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hongyangb

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[求助] 求英譯一段中文摘要，急用！如果覺得內(nèi)容有哪里不太通順請告知。非常感謝

摘要：鐵酸鉍是目前發(fā)現(xiàn)的唯一能在室溫下表現(xiàn)出多鐵性的材料，具有禁帶寬度較小、剩余極化強(qiáng)度較大、居里溫度較高的優(yōu)良特性，在光電器件、自旋電子器件、鐵電隨機(jī)存儲器、磁電存儲單元等領(lǐng)域有著廣闊的應(yīng)用前景。但由于鐵酸鉍薄膜存在漏電流較大、磁電耦合性較弱等問題，制約了它的實際應(yīng)用。國內(nèi)外學(xué)者多采用優(yōu)化鐵酸鉍薄膜的制備工藝、離子摻雜等方法來改善其結(jié)構(gòu)與性能。其中，離子摻雜具有操作方便、易于實現(xiàn)薄膜的微結(jié)構(gòu)及性能調(diào)控等優(yōu)點，因而受到廣泛關(guān)注。本文綜述了國內(nèi)外近年關(guān)于鐵酸鉍薄膜電性能摻雜改性的相關(guān)工作，詳細(xì)闡述了不同種類的摻雜，包括A位（三價鑭系元素與二價堿金屬元素）、B位（過渡金屬元素等）以及AB位共摻雜。并根據(jù)摻雜對鐵酸鉍薄膜的漏電流及剩余極化強(qiáng)度的影響，對A位摻雜和B位摻雜中的元素進(jìn)行了分類，系統(tǒng)的總結(jié)了各類元素?fù)诫s改性的效果及其機(jī)理。最后，提出了鐵酸鉍薄膜亟待解決的問題。

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1樓 2014-09-12 17:00:59

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【答案】應(yīng)助回帖

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RXMCDM: 金幣+1, 多謝應(yīng)助！ 2014-09-14 10:56:21
hongyangb: 金幣+20, 翻譯EPI+1, ★★★很有幫助, 非常感謝 2014-09-14 12:43:12

Abstract: Bismuth ferrite is the only material found so far with the multiferroic properties at room temperature. It has several excellent features, including a smaller band gap, large remnant polarization and high Curie temperature. Therefore, bismuth ferrite has broad application prospects in optoelectronic devices, self-spinning electronic devices, ferroelectric random access memories, magnetic storage units, and other areas. However, its practical application has been limited largely because of the presence of a large leakage current and weak magnetic coupling issues of bismuth ferrite films. Most of the domestic and international scholars use the optimized preparation process of bismuth ferrite thin films, ion doping and other methods to improve its structure and performance. Among them, the ion doping is easy to operate, easy to implement micro-structure, and easy to control its performance, and therefore attracted widespread attention. This paper reviews the domestic and international publications in recent years related to electrical properties of doped bismuth ferrite thin films. It is described in great details in different types of doping, including the A-site (trivalent lanthanide and divalent alkali metal elements), B site (transition metals, etc.) and A-B sites co-doped. The elements in A-site and B-site doping are clarified based on the effects of doping on the leakage current of bismuth ferrite films and residual polarization intensity. The effects and mechanisms of various types of elements doping are summarized systemically. Finally, the problems are presented related to the bismuth ferrite films need to be resolved urgently.

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2樓2014-09-14 10:37:07

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